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B125C1000-LF PDF预览

B125C1000-LF

更新时间: 2024-02-11 13:30:44
品牌 Logo 应用领域
WTE 整流二极管桥式整流二极管IOT
页数 文件大小 规格书
4页 46K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 300V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, WOB, 4 PIN

B125C1000-LF 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.68配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:O-PBCY-W4最大非重复峰值正向电流:45 A
元件数量:4相数:1
端子数量:4最大输出电流:1.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

B125C1000-LF 数据手册

 浏览型号B125C1000-LF的Datasheet PDF文件第2页浏览型号B125C1000-LF的Datasheet PDF文件第3页浏览型号B125C1000-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
B40C1000 – B500C1000  
1.0A SINGLE-PHASE BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Excellent Case Dielectric Strength  
A
B
+
~
~
-
WOB  
Min  
Dim  
A
Max  
9.10  
5.50  
8.60  
5.0  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
B
C
D
C
27.9  
25.4  
0.71  
4.60  
Mechanical Data  
!
!
D
Case: WOB, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
E
E
0.81  
5.60  
G
All Dimensions in mm  
~
!
!
!
!
!
Polarity: As Marked on Body  
Weight: 1.1 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
-
+
G
G
~
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
B40C  
1000  
B80C B125C B250C B380C B500C  
Characteristic  
Symbol  
Unit  
1000  
1000  
1000  
1000  
1000  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
40  
200  
300  
600  
900  
1200  
V
Input Voltage Recommended  
VR(RMS)  
IO  
80  
125  
250  
380  
500  
V
A
Average Rectified Output Current (Note 1) @TA = 50°C  
1.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
45  
A
Forward Voltage (per element)  
@IF = 1.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
500  
µA  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
B40C1000 – B500C1000  
1 of 4  
© 2006 Won-Top Electronics  

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