Datasheet > B120BQ

B120BQ

更新时间： 2023-12-06 20:13:35

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美台 - DIODES		/
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描述
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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B120BQ 数据手册

B120Q/BQ - B160Q/BQ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol B120Q/BQ

B130Q/BQ

B140Q/BQ

B150Q/BQ

B160Q/BQ

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_O

1.0

Average Rectified Output Current @ T_T= +130°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated

Load

I_FSM

Electrostatic Discharge

HBM

CDM

4000

400

Thermal Characteristics

Characteristic

Typical Thermal Resistance Junction to Ambient

(Note 6)

Symbol B120Q/BQ B130Q/BQ B140Q/BQ B150Q/BQ B160Q/BQ

Unit

115

°C/W

R_θJA

Typical Thermal Resistance Junction to Ambient

(Note 7)

Operating and Storage Temperature Range

°C/W

°C

R_θJA

-65 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

B120Q/BQ, B130Q/BQ, B140Q/BQ

B150Q/BQ, B160Q/BQ

Symbol

Min

Typ

Max

Unit

Test Condition

I_F= 1.0A

0.5

0.7

—

Forward Voltage Drop

V_F

—

0.5

@ Rated V_R,T_A= +25°C

@ Rated V_R,T_A= +100°C

V_R= 4V, f = 1MHz

Leakage Current (Note 8)

Total Capacitance

I_R

—

110

C_T

t_RR

I_F= 0.5A, I_R= 1A, I_RR

0.25A (RG1)

Switching Speed



Notes:

6. 1*MRP FR-4 PC board, 2oz.

7. With 50mm*50mm*23mm Al heatsink.

8. Short duration pulse test used to minimize self-heating effect.

150℃

125℃

100℃

125℃

100℃

85℃

0.1

0.01

85℃

25℃

-55℃

0.01

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.2

0.4

0.6

0.8

1.0

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 2. Typical Forward Characteristics

B150Q/BQ - B160Q/BQ

Figure 1. Typical Forward Characteristics

B120Q/BQ-B140Q/BQ

2 of 7

www.diodes.com

December 2018

B120Q/BQ - B160Q/BQ

Document number: DS38236 Rev. 4 - 2

123 4 5 6 7

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