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AZ23B3V6-V-GS18 PDF预览

AZ23B3V6-V-GS18

更新时间: 2024-01-14 22:31:54
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 107K
描述
DIODE 3.6 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT PACKAGE-3, Voltage Regulator Diode

AZ23B3V6-V-GS18 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.22Is Samacsys:N
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:95 Ω
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:3.6 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10最大电压容差:1.94%
工作测试电流:5 mABase Number Matches:1

AZ23B3V6-V-GS18 数据手册

 浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第2页浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第3页浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第4页浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第6页浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第7页浏览型号AZ23B3V6-V-GS18的Datasheet PDF文件第8页 
AZ23-V-Series  
Vishay Semiconductors  
www.vishay.com  
V
V
0.8  
1.6  
25  
15  
ΔVZ = Rzth x IZ  
0.7  
VZ at IZ = 5 mA  
1.4  
1.2  
10  
0.6  
0.5  
0.4  
ΔVZ  
ΔVZ  
1
0.8  
0.6  
8
7
0.3  
0.2  
0.1  
6.2  
5.9  
0.4  
0.2  
5.6  
5.1  
0
- 1  
0
- 0.2  
- 0.4  
4.7  
3.6  
- 0.2  
1
2
3
4
5
10  
2
3
4
5
100 V  
100 120 140 C  
Tj  
0
20 40 60 80  
18127  
18124  
VZ at IZ = 5 mA  
Fig. 7 - Change of Zener Voltage vs. Junction Temperature  
Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of  
Thermal Equilibrium vs. Zener Voltage  
mV/°C  
100  
V
5
Δ
VZ = Rzth x IZ  
IZ = 5 mA  
4
3
2
ΔVZ  
80  
60  
Δ
Tj  
ΔVZ  
IZ = 5 mA  
40  
20  
1
IZ = 2 mA  
0
0
0
20  
40  
60  
80  
100 V  
0
20  
40  
60  
80  
100 V  
VZ  
18128  
VZ  
18125  
Fig. 8 - Temperature Dependence of Zener Voltage vs.  
Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of  
Zener Voltage  
Thermal Equilibrium vs. Zener Voltage  
mA  
50  
V
9
T = 25 °C  
j
3.9  
5.6  
2.7  
8
7
6.8  
3.3 4.7  
40  
8.2  
lZ  
51  
ΔV  
6
5
4
Z
30  
20  
43  
36  
3
2
Test  
current  
IZ 5 mA  
1
10  
0
0
I
= 2 mA  
Z
- 1  
0
20 40 60 80 100 120 140 °C  
0
1
2
3
4
5
6
7
8
9
10 V  
18126  
T
j
V
18111  
Z
Fig. 9 - Change of Zener Voltage vs. Junction Temperature  
Fig. 12 - Breakdown Characteristics  
Rev. 1.7, 22-Nov-11  
Document Number: 85759  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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