Datasheet > AXUV100TI/C2

AXUV100TI/C2

更新时间： 2022-09-29 11:46:39

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	314K
描述
SENSOR ELECTRON DETECTION 100MM

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数据手册

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AXUV100TI/C2 数据手册

From Deep UV to Mid-IR

Photodiode 100 mm²with

Integrated Thin Film Filter

AXUV100TF030

An ITW Company

FEATURES

• 100 mm²Square Active Area

• Responsivity @ 3 nm 0.16 A/W

• Detection Range 1 nm to 12 nm

• Shipped with Protective Cover

Electro-Optical Characteristics at 25°C

Parameters

Test Conditions

10 mm x 10 mm

@ 3 nm

Min

Typ

100

0.16

Max

Units

mm²

A/W

Active Area

Responsivity

Shunt Resistance, Rsh

Reverse Breakdown Voltage, V_R

Capacitance, C

@ ±10 mV

1_R= 1 µA

Ohms

Volts

V_R= 0 V

Thermal Parameters

Units

Storage and Operating Temperature Range

Ambient

–10° to 40°C

–20 to 80°C

260°C

Nitrogen or Vacuum

Lead Soldering Temperature*

*0.080" from case for 10 seconds.

Revision November 26, 2019

Page 1 of 2

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