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AUXFS4409TRL

更新时间： 2024-01-08 09:17:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 233K
描述
HEXFET® Power MOSFET

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中文翻译

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AUXFS4409TRL 数据手册

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PD - 97793  
AUTOMOTIVE GRADE  
AUXFS4409  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
Advanced Process Technology  
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
D
V(BR)DSS  
300V  
RDS(on) typ.  
58m  
75m  
39A  
G
max.  
S
ID  
Automotive Qualified *  
Description  
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescom-  
bine to make this design an extremely efficient  
andreliabledeviceforuseinAutomotiveapplica-  
tions and a wide variety of other applications.  
D
S
D
G
D2Pak  
AUXFS4409  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
39  
Units  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
28  
A
180  
PD @TC = 25°C  
Power Dissipation  
375  
2.5  
± 20  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
VGS  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS  
550  
690  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
Operating Junction and  
-55 to + 175  
300  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
RJC  
Junction-to-Case  
RJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/26/12  
1234567...13

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