Datasheet > AUXFS4409TRL

AUXFS4409TRL

更新时间： 2024-02-01 21:19:49

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	233K
描述
HEXFETÂ® Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AUXFS4409TRL 数据手册

PD - 97793

AUTOMOTIVE GRADE

AUXFS4409

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

LowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

V_(BR)DSS

300V

R_DS(on)typ.

58m

75m

39A



max.

I_D

Automotive Qualified *

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak

AUXFS4409

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

180

P_D@T_C= 25°C

Power Dissipation

375

2.5

± 20

W/°C

Linear Derating Factor

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy (Thermally Limited)

E_AS

550

690

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

T_J

Operating Junction and

-55 to + 175

300

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_JC

Junction-to-Case

R_JA

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/26/12

12 3 4 5 6 7...13

中文翻译

下载PDF

与AUXFS4409TRL相关器件

型号	品牌	获取价格	描述	数据表
AUXFS4409TRR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUXXX1D1F-T	APPLIED POWER	获取价格	Surge Protection TVS
AU-Y1005	ASSMANN	获取价格	CONN USB RTANG FMALE TYPE A PCB
AU-Y1006-2	ASSMANN	获取价格	CONN PCB USB RA FEM TYPE A SMD
AU-Y1007	ETC	获取价格	USB CONNECTOR, SERIES B 4 POSITIONS. R/A THUR-HOLE
AU-Y1007-2	ASSMANN	获取价格	CONN PCB USB RA FEM TYPE B DIP
AU-Y1008	ASSMANN	获取价格	CONN USB RTANG FMALE TYPE A DUAL
AU-Y1008-2	ASSMANN	获取价格	CONN USB 2.0 R/A DL FMALE TYPE A
AUY13A	SUNLED	获取价格	12.7mm (0.5) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY
AUY13A-A	SUNLED	获取价格	12.7mm (0.5) 16 SEGMENT SINGLE DIGIT ALPHANUMERIC DISPLAY