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ATF-10736

更新时间： 2024-01-31 06:34:17

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
4页	51K
描述
0.5?12 GHz General Purpose Gallium Arsenide FET

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数据手册

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ATF-10736 数据手册

0.5–12 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-10736

Features

Description

36 micro-X Package

• High Associated Gain:

13.0 dBTypicalat4 GHz

The ATF-10736 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a cost effective

• LowBias:

V_DS=2V,I_DS=25 mA

microstrip package. Its noise

figure makes this device appropri-

ate for use in the gain stages of

low noise amplifiers operating in

the0.5-12GHzfrequencyrange.

• High Output Power:

20.0 dBmtypicalP _1dBat4 GHz

• Low Noise Figure:

1.2 dBTypicalat4 GHz

• Cost Effective Ceramic

Microstrip Package

This GaAs FET device has a

nominal 0.3 micron gate length

using airbridge interconcnects

between drain fingers. Total gate

periphery is 500 microns. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

• Tape-and-Reel Packaging

Option Available^[1]

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Optimum Noise Figure: V_DS= 2 V, I_DS= 25 mA

Units Min. Typ. Max.

NF_O

f=2.0GHz

f=4.0GHz

f=6.0GHz

0.9

1.2

1.4

G_A

Gain @ NF ; V_DS= 2 V, I_DS= 25 mA

f=2.0GHz

f=4.0GHz

f=6.0GHz

16.5

13.0

10.5

12.0

P_{1 dB}

Power Output @ 1 dB Gain Compression

V_DS=4V, I_DS=70mA

f=4.0GHz dBm

20.0

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS= 4 V, I_DS= 70 mA

Transconductance: V_DS= 2 V, V_GS= 0 V

Saturated Drain Current: V_DS= 2 V, V_GS= 0 V

Pinchoff Voltage: V_DS= 2 V, I_DS= 1 mA

f=4.0GHz

mmho 70

12.0

140

130

-1.3

I_DSS

V_P

180

-0.5

-4.0

Note:

1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

5-29

5965-8698E

12 3 4

中文翻译

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