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ATF-10736-TRI PDF预览

ATF-10736-TRI

更新时间: 2024-01-01 17:46:05
品牌 Logo 应用领域
安捷伦 - AGILENT /
页数 文件大小 规格书
4页 51K
描述
0.5?12 GHz General Purpose Gallium Arsenide FET

ATF-10736-TRI 技术参数

生命周期:Transferred包装说明:MICROWAVE, S-CXMW-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.23
Is Samacsys:N其他特性:LOW NOISE
配置:SINGLE最小漏源击穿电压:5 V
最大漏极电流 (ID):0.18 AFET 技术:METAL SEMICONDUCTOR
最高频带:X BANDJESD-30 代码:S-CXMW-F4
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:MICROWAVE极性/信道类型:N-CHANNEL
功耗环境最大值:0.43 W最小功率增益 (Gp):12 dB
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:UNSPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

ATF-10736-TRI 数据手册

 浏览型号ATF-10736-TRI的Datasheet PDF文件第2页浏览型号ATF-10736-TRI的Datasheet PDF文件第3页浏览型号ATF-10736-TRI的Datasheet PDF文件第4页 
0.512 GHz General Purpose  
Gallium Arsenide FET  
Technical Data  
ATF-10736  
Features  
Description  
36 micro-X Package  
• High Associated Gain:  
13.0 dBTypicalat4 GHz  
The ATF-10736 is a high perfor-  
mance gallium arsenide Schottky-  
barrier-gate field effect transistor  
housed in a cost effective  
• LowBias:  
VDS =2V,IDS=25 mA  
microstrip package. Its noise  
figure makes this device appropri-  
ate for use in the gain stages of  
low noise amplifiers operating in  
the0.5-12GHzfrequencyrange.  
• High Output Power:  
20.0 dBmtypicalP 1dB at4 GHz  
• Low Noise Figure:  
1.2 dBTypicalat4 GHz  
• Cost Effective Ceramic  
Microstrip Package  
This GaAs FET device has a  
nominal 0.3 micron gate length  
using airbridge interconcnects  
between drain fingers. Total gate  
periphery is 500 microns. Proven  
gold based metallization systems  
and nitride passivation assure a  
rugged, reliable device.  
• Tape-and-Reel Packaging  
Option Available[1]  
Electrical Specifications, TA = 25°C  
Symbol  
Parameters and Test Conditions  
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA  
Units Min. Typ. Max.  
NFO  
f=2.0GHz  
f=4.0GHz  
f=6.0GHz  
dB  
dB  
dB  
0.9  
1.2  
1.4  
1.4  
GA  
Gain @ NF ; VDS = 2 V, IDS = 25 mA  
f=2.0GHz  
f=4.0GHz  
f=6.0GHz  
dB  
dB  
dB  
16.5  
13.0  
10.5  
O
12.0  
P1 dB  
Power Output @ 1 dB Gain Compression  
VDS =4V, IDS =70mA  
f=4.0GHz dBm  
20.0  
G1 dB  
gm  
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA  
Transconductance: VDS = 2 V, VGS = 0 V  
Saturated Drain Current: VDS = 2 V, VGS = 0 V  
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA  
f=4.0GHz  
dB  
mmho 70  
12.0  
140  
130  
-1.3  
IDSS  
VP  
mA  
V
70  
180  
-0.5  
-4.0  
Note:  
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”  
5-29  
5965-8698E  

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