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AT28C010-12FM/883 PDF预览

AT28C010-12FM/883

更新时间: 2024-02-24 07:58:22
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
11页 660K
描述
1 Megabit 128K x 8 Paged CMOS E2PROM

AT28C010-12FM/883 技术参数

是否无铅:不含铅是否Rohs认证:不符合
生命周期:Active包装说明:DFP, FL32,.5
Reach Compliance Code:compliantFactory Lead Time:14 weeks
风险等级:5.57Is Samacsys:N
最长访问时间:120 ns其他特性:AUTOMATIC WRITE; DATA RETENTION: 10 YEARS
命令用户界面:NO数据轮询:YES
数据保留时间-最小值:10耐久性:10000 Write/Erase Cycles
JESD-30 代码:R-CDFP-F32JESD-609代码:e0
长度:20.85 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装等效代码:FL32,.5
封装形状:RECTANGULAR封装形式:FLATPACK
页面大小:128 words并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:3.05 mm
最大待机电流:0.0003 A子类别:EEPROMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES宽度:12.2 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

AT28C010-12FM/883 数据手册

 浏览型号AT28C010-12FM/883的Datasheet PDF文件第1页浏览型号AT28C010-12FM/883的Datasheet PDF文件第3页浏览型号AT28C010-12FM/883的Datasheet PDF文件第4页浏览型号AT28C010-12FM/883的Datasheet PDF文件第5页浏览型号AT28C010-12FM/883的Datasheet PDF文件第6页浏览型号AT28C010-12FM/883的Datasheet PDF文件第7页 
Description (Continued)  
access times to 120 ns with power dissipation of just 440  
mW. When the device is deselected, the CMOS standby  
current is less than 300 µA.  
control timer. The end of a write cycle can be detected by  
DATA POLLING of I/O7. Once the end of a write cycle has  
been detected a new access for a read or write can begin.  
Atmel’s 28C010 has additional features to ensure high  
quality and manufacturability. The device utilizes internal  
error correction for extended endurance and improved  
data retention characteristics. An optional software data  
protection mechanism is available to guard against inad-  
vertent writes. The device also includes an extra 128-  
The AT28C010 is accessed like a Static RAM for the read  
or write cycle without the need for external components.  
The device contains a 128-byte page register to allow writ-  
ing of up to 128-bytes simultaneously. During a write cy-  
cle, the address and 1 to 128-bytes of data are internally  
latched, freeing the address and data bus for other opera-  
tions. Following the initiation of a write cycle, the device  
will automatically write the latched data using an internal  
2
bytes of E PROM for device identification or tracking.  
Block Diagram  
Absolute Maximum Ratings*  
*NOTICE: Stresses beyond those listed under “Absolute Maxi-  
mum Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of the  
device at these or any other conditions beyond those indi-  
cated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions  
for extended periods may affect device reliability.  
Temperature Under Bias................. -55°C to +125°C  
Storage Temperature...................... -65°C to +150°C  
All Input Voltages  
(including NC Pins)  
with Respect to Ground ................... -0.6V to +6.25V  
All Output Voltages  
with Respect to Ground .............-0.6V to V + 0.6V  
CC  
Voltage on OE and A9  
with Respect to Ground ................... -0.6V to +13.5V  
2-244  
AT28C010 Mil  

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