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AT27C256R-70RI PDF预览

AT27C256R-70RI

更新时间: 2024-01-05 14:51:31
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
9页 254K
描述
256K 32K x 8 OTP CMOS EPROM

AT27C256R-70RI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.57
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G28JESD-609代码:e3
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:OTP ROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP28,.53,22封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:13 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

AT27C256R-70RI 数据手册

 浏览型号AT27C256R-70RI的Datasheet PDF文件第3页浏览型号AT27C256R-70RI的Datasheet PDF文件第4页浏览型号AT27C256R-70RI的Datasheet PDF文件第5页浏览型号AT27C256R-70RI的Datasheet PDF文件第6页浏览型号AT27C256R-70RI的Datasheet PDF文件第8页浏览型号AT27C256R-70RI的Datasheet PDF文件第9页 
AT27C256R  
AC Programming Characteristics  
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, VPP = 13.0 ± 0.25V  
Rapid Programming Algorithm  
A 100 µs CE pulse width is used to program. The address  
is set to the first location. V is raised to 6.5V and V is  
CC  
PP  
raised to 13.0V. Each address is first programmed with  
one 100 µs CE pulse without verification. Then a verifica-  
tion/reprogramming loop is executed for each address. In  
the event a byte fails to pass verification, up to 10 succes-  
sive 100 µs pulses are applied with a verification after  
each pulse. If the byte fails to verify after 10 pulses have  
been applied, the part is considered failed. After the byte  
verifies properly, the next address is selected until all have  
Sym-  
bol  
Test  
Conditions*  
Limits  
Min Max  
(1)  
Parameter  
Units  
µs  
Address Setup Time  
OE Setup Time  
2
2
t
t
AS  
µs  
OES  
Data Setup  
Time  
2
µs  
t
DS  
Address Hold Time  
Data Hold Time  
0
2
µs  
µs  
t
t
AH  
been checked. V is then lowered to 5.0V and V  
to  
PP  
CC  
DH  
5.0V. All bytes are read again and compared with the origi-  
nal data to determine if the device passes or fails.  
OE High to Out-  
0
2
130  
ns  
µs  
µs  
µs  
ns  
ns  
put Float Delay (2)  
t
t
t
t
t
t
DFP  
VPS  
VCS  
PW  
VPP Setup  
Time  
VCC Setup  
Time  
2
CE Program  
95  
105  
150  
Pulse Width (3)  
Data  
Valid from OE (2)  
OE  
VPP Pulse Rise Time During  
Programming  
50  
PRT  
*AC Conditions of Test:  
Input Rise and Fall Times (10% to 90%)..............20 ns  
Input Pulse Levels...................................0.45V to 2.4V  
Input Timing Reference Level...................0.8V to 2.0V  
Output Timing Reference Level................0.8V to 2.0V  
Notes: 1. VCC must be applied simultaneously or before VPP  
and removed simultaneously or after VPP  
.
2. This parameter is only sampled and is not 100%  
tested. Output Float is defined as the point where  
data is no longer driven — see timing diagram.  
3. Program Pulse width tolerance is 100 µsec ± 5%.  
Atmel’s 27C256R Integrated  
Product Identification Code  
Pins  
Hex  
Codes  
Data  
A0 O7 O6 O5 O4 O3 O2 O1 O0  
Manufacturer  
Device Type  
0
1
0
1
0
0
0
0
1
0
1
1
1
1
1
0
0
0
1E  
8C  
3-131  

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