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AT27C020-90TU PDF预览

AT27C020-90TU

更新时间: 2024-02-16 08:28:07
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
14页 358K
描述
2-megabit (256K x 8) OTP EPROM

AT27C020-90TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, GREEN, PLASTIC, MO-142BD, TSOP1-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.64Is Samacsys:N
最长访问时间:90 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:OTP ROM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.0001 A子类别:OTP ROMs
最大压摆率:0.025 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

AT27C020-90TU 数据手册

 浏览型号AT27C020-90TU的Datasheet PDF文件第1页浏览型号AT27C020-90TU的Datasheet PDF文件第2页浏览型号AT27C020-90TU的Datasheet PDF文件第4页浏览型号AT27C020-90TU的Datasheet PDF文件第5页浏览型号AT27C020-90TU的Datasheet PDF文件第6页浏览型号AT27C020-90TU的Datasheet PDF文件第7页 
AT27C020  
3. System Considerations  
Switching between active and standby conditions via the Chip Enable pin may produce tran-  
sient voltage excursions. Unless accommodated by the system design, these transients may  
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high-  
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This  
capacitor should be connected between the VCC and Ground terminals of the device, as close  
to the device as possible. Additionally, to stabilize the supply-voltage level on printed circuit  
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again  
connected between the VCC and Ground terminals. This capacitor should be positioned as  
close as possible to the point where the power supply is connected to the array.  
4. Block Diagram  
5. Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device  
reliability.  
Temperature under Bias ................................ -55°C to +125°C  
Storage Temperature..................................... -65°C to +150°C  
Voltage on Any Pin with ±  
Respect to Ground .........................................-2.0V to +7.0V(1)  
Voltage on A9 with ±  
Respect to Ground ......................................-2.0V to +14.0V(1)  
VPP Supply Voltage with ±  
Respect to Ground .......................................-2.0V to +14.0V(1)  
Note:  
1. Minimum voltage is -0.6V DC, which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is  
VCC + 0.75V DC, which may overshoot to +7.0V for pulses of less than 20 ns.  
3
0570G–EPROM–12/07  

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