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AT27BV512-70TU PDF预览

AT27BV512-70TU

更新时间: 2024-02-26 16:25:41
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 392K
描述
512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM

AT27BV512-70TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:8 X 13.40 MM, GREEN, PLASTIC, MO-183, TSOP1-28针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.69
最长访问时间:70 ns其他特性:ALSO OPERATES AT 5V SUPPLY
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:11.8 mm
内存密度:524288 bit内存集成电路类型:OTP ROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
子类别:OTP ROMs最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:8 mm
Base Number Matches:1

AT27BV512-70TU 数据手册

 浏览型号AT27BV512-70TU的Datasheet PDF文件第1页浏览型号AT27BV512-70TU的Datasheet PDF文件第2页浏览型号AT27BV512-70TU的Datasheet PDF文件第4页浏览型号AT27BV512-70TU的Datasheet PDF文件第5页浏览型号AT27BV512-70TU的Datasheet PDF文件第6页浏览型号AT27BV512-70TU的Datasheet PDF文件第7页 
AT27BV512  
3. System Considerations  
Switching between active and standby conditions via the Chip Enable pin may produce tran-  
sient voltage excursions. Unless accommodated by the system design, these transients may  
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high  
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This  
capacitor should be connected between the VCC and Ground terminals of the device, as close  
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit  
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again  
connected between the VCC and Ground terminals. This capacitor should be positioned as  
close as possible to the point where the power supply is connected to the array.  
4. Block Diagram  
5. Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent dam-  
age to the device. This is a stress rating only and  
functional operation of the device at these or any  
other conditions beyond those indicated in the  
operational sections of this specification is not  
implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
device reliability  
Temperature Under Bias.................................. -40°C to +85°C  
Storage Temperature..................................... -65°C to +125°C  
Voltage on Any Pin with  
Respect to Ground .........................................-2.0V to +7.0V(1)  
Voltage on A9 with  
Respect to Ground ......................................-2.0V to +14.0V(1)  
VPP Supply Voltage with  
Respect to Ground .......................................-2.0V to +14.0V(1)  
Notes: 1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is  
VCC + 0.75V DC which may be exceeded if certain precautions are observed (consult application notes) and which may  
overshoot to +7.0V for pulses of less than 20 ns.  
3
0602E–EPROM–12/07  

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