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AT27BV512-12RI PDF预览

AT27BV512-12RI

更新时间: 2024-02-20 15:15:22
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池存储内存集成电路光电二极管异步传输模式ATM可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
9页 232K
描述
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM

AT27BV512-12RI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1, TSSOP28,.53,22
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.48Is Samacsys:N
最长访问时间:120 ns其他特性:CAN ALSO BE OPERATED AT 4.5V TO 5.5V RANGE
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:524288 bit内存集成电路类型:OTP ROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
子类别:OTP ROMs最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.55 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

AT27BV512-12RI 数据手册

 浏览型号AT27BV512-12RI的Datasheet PDF文件第1页浏览型号AT27BV512-12RI的Datasheet PDF文件第3页浏览型号AT27BV512-12RI的Datasheet PDF文件第4页浏览型号AT27BV512-12RI的Datasheet PDF文件第5页浏览型号AT27BV512-12RI的Datasheet PDF文件第6页浏览型号AT27BV512-12RI的Datasheet PDF文件第7页 
System Considerations  
Description (Continued)  
Standby mode supply current is typically less than 1 µA at  
3V. The AT27BV512 simplifies system design and  
stretches battery lifetime even further by eliminating the  
need for power supply regulation.  
Switching between active and standby conditions via the  
Chip Enable pin may produce transient voltage excur-  
sions. Unless accommodated by the system design, these  
transients may exceed data sheet limits, resulting in de-  
vice non-conformance. At a minimum, a 0.1 µF high fre-  
quency, low inherent inductance, ceramic capacitor  
should be utilized for each device. This capacitor should  
The AT27BV512 is available in industry standard JEDEC-  
approved one-time programmable (OTP) plastic PLCC,  
SOIC, and TSOP packages. All devices feature two-line  
control (CE, OE) to give designers the flexibility to prevent  
bus contention.  
be connected between the V and Ground terminals of  
CC  
the device, as close to the device as possible. Additionally,  
to stabilize the supply voltage level on printed circuit  
boards with large EPROM arrays, a 4.7 µF bulk electrolytic  
capacitor should be utilized, again connected between the  
The AT27BV512 operating with V at 3.0V produces TTL  
CC  
level outputs that are compatible with standard TTL logic  
devices operating at V = 5.0V. At V = 2.7V, the part  
CC  
CC  
V
and Ground terminals. This capacitor should be posi-  
CC  
is compatible with JEDEC approved low voltage battery  
operation (LVBO) interface specifications. The device is  
also capable of standard 5-volt operation making it ideally  
suited for dual supply range systems or card products that  
are pluggable in both 3-volt and 5-volt hosts.  
tioned as close as possible to the point where the power  
supply is connected to the array.  
Atmel’s AT27BV512 has additional features to ensure  
high quality and efficient production use. The Rapid Pro-  
gramming Algorithm reduces the time required to program  
the part and guarantees reliable programming. Program-  
ming time is typically only 100 µs/byte. The Integrated  
Product Identification Code electronically identifies the de-  
vice and manufacturer. This feature is used by industry  
standard programming equipment to select the proper  
programming algorithms and voltages. The AT27BV512  
programs exactly the same way as a standard 5V  
AT27C512R and uses the same programming equipment.  
3-14  
AT27BV512  

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