Datasheet > ASDM4407BS

ASDM4407BS

更新时间： 2024-09-30 17:15:31

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1215K
描述
SOP-8

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中文翻译

获取价格

数据手册

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ASDM4407BS 数据手册

ASDM4407BS

-30V P-Channel MOSFET

General Description

● Trench Power LV MOSFET technology

● High density cell design for Low R_DS(ON)

● High Speed switching

Product Summary

V DS

-30

mΩ

● ꢀꢁꢂ >±ꢃꢄꢀ

R DS(on),TYP@ VGS=10 V

I D

8.8

-14

Applications

● Battery protection

● Load switch

● Power management

top view

ASCEND

SOP-8

Absolute Maximum Ratings T_A= 25ºC, unless otherwise noted

Parameter

Symbol

Values

-30

Unit

Drain-Source voltage(V_GS=0V)

V_DS

T_A= 25ºC

-14

Continuous Drain Current²⁾

I_D

T_A= 100ºC

-8.8

Pulsed Drain Current³⁾

I_D,pulse

V_GSS

E_AS

-56

Gate-Source Voltage

±25V

135

Single Pulse Avalanche Energy

Power Dissipation

P_D

2.9

Continuous Diode Forward Current

Diode Forward Voltage

I_S

-4

V_SD

-1.2

Operating Junction and Storage Temperature Range

T_J, T_stg

-55~+150

ºC

www.ascendsemi.com

0755-86970486

JAN 2019 Version1.1

1/7

12 3 4 5 6 7

中文翻译

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