Datasheet > AS4C64M16D1A-6TCN

AS4C64M16D1A-6TCN

更新时间： 2022-02-26 12:49:37

品牌	Logo	应用领域
ALSC		/
页数	文件大小	规格书
62页	2082K
描述
Fully synchronous operation

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AS4C64M16D1A-6TCN 数据手册

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第1页

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第3页

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第4页

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第5页

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第6页

浏览型号AS4C64M16D1A-6TCN的Datasheet PDF文件第7页

AS4C64M16D1A-6TIN

AS4C64M16D1A-6TCN

Overview

Features

Fast clock rate: 166MHz

•

The 1Gb DDR SDRAM is a high-speed CMOS double

data rate synchronous DRAM containing 1024 Mbits. It is

internally configured as a quad 16M x 16 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal, CK).

Differential Clock CK &

Bi-directional DQS

Data outputs occur at both rising edges of CK and

and write accesses to the SDRAM are burst oriented;

accesses start at a selected location and continue for a

. Read

DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 16M x 16-bit for each bank

programmed number of locations in

a programmed

sequence. Accesses begin with the registration of a

BankActivate command which is then followed by a Read or

Write command. The device provides programmable Read

or Write burst lengths of 2, 4, or 8. An auto precharge

function may be enabled to provide a self-timed row

precharge that is initiated at the end of the burst sequence.

The refresh functions, either Auto or Self Refresh are easy to

use. In addition, 1Gb DDR features programmable DLL

option. By having a programmable mode register and

extended mode register, the system can choose the most

suitable modes to maximize its performance. These devices

are well suited for applications requiring high memory

bandwidth; result in a device particularly well suited to high

performance main memory and graphics applications.

Programmable Mode and Extended Mode registers

- CAS Latency: 2, 2.5, 3

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

Individual byte write mask control

DM Write Latency = 0

•

Auto Refresh and Self Refresh

8192 refresh cycles / 64ms

Precharge & active power down

= 2.5V 0.2V

DD & DDQ

Power supplies: V

Industrial Operating Temperature: T_A= -40~85°C

Interface: SSTL_2 I/O Interface

Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb and Halogen free

Table 1. Ordering Information

Org

Temperature

Max Clock (MHz)

166MHz

Product part No

Package

AS4C64M16D1A-6TCN

Commercial 0°C to 85°C

Industrial -40°C to 85°C

64 x 16

66 Pin TSOPII

AS4C64M16D1A-6TIN

66 Pin TSOPII

64 x 16

166MHz

Confidential

- 2/62 -

Rev. 1.0 Oct.2015

123 4 5 6 7...62

下载PDF

与AS4C64M16D1A-6TCN相关器件

型号	品牌	描述	获取价格	数据表
AS4C64M16D1A-6TIN	ALSC	Fully synchronous operation	获取价格
AS4C64M16D2	ALSC	JEDEC Standard Compliant	获取价格
AS4C64M16D2-25BCN	ALSC	JEDEC Standard Compliant	获取价格
AS4C64M16D2-25BIN	ALSC	JEDEC Standard Compliant	获取价格
AS4C64M16D3A	ALSC	96 ball FBGA PACKAGE	获取价格
AS4C64M16D3A-12BCN	ALSC	96 ball FBGA PACKAGE	获取价格