5秒后页面跳转
AS1J-E3/61T PDF预览

AS1J-E3/61T

更新时间: 2024-02-11 21:07:12
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 76K
描述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diode

AS1J-E3/61T 技术参数

生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.92 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:YES端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

AS1J-E3/61T 数据手册

 浏览型号AS1J-E3/61T的Datasheet PDF文件第2页浏览型号AS1J-E3/61T的Datasheet PDF文件第3页浏览型号AS1J-E3/61T的Datasheet PDF文件第4页 
New Product  
AS1B thru AS1M  
Vishay General Semiconductor  
Standard Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DO-214AC (SMA)  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer  
and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
100 V to 1000 V  
30 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
IR  
0.4 µA  
VF at IF = 1.0 A  
TJ max.  
0.84 V  
175 °C  
Terminals: Matte tin plated leads, solderable per J-STD-002  
and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
AS1B  
ASB  
100  
AS1D  
ASD  
200  
AS1G  
ASG  
400  
AS1J  
ASJ  
600  
AS1K  
ASK  
800  
AS1M  
ASM  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current (fig. 1)  
VRRM  
IF(AV)  
1000  
V
A
1.0  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number: 89118  
Revision: 10-Aug-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

与AS1J-E3/61T相关器件

型号 品牌 描述 获取价格 数据表
AS1K-E3/5AT VISHAY DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diod

获取价格

AS1K-E3/61T VISHAY DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Diod

获取价格

AS1M-E3/5AT VISHAY DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Dio

获取价格

AS1M-E3/61T VISHAY DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, SMA, 2 PIN, Signal Dio

获取价格

AS1N-2M-10-Z NIDEC Hyper-miniature Slide Switchess

获取价格

AS1N-5M-10-Z NIDEC Hyper-miniature Slide Switchess

获取价格