DATA SHEET • AS193-000
Absolute Maximum Ratings
Truth Table
Characteristic
Value
V
1
V
2
J –J
1
J –J
1 3
2
0
V
Isolation
Insertion loss
Isolation
RF input power
6 W max. > 900 MHz,
0/5 V control
HIGH
V
0
Insertion loss
HIGH
Control voltage
-0.2 V, +8 V
All other conditions not recommended.
VHIGH = 2.5 to 5 V.
Operating temperature
Storage temperature
-40 °C to +85 °C
-65 °C to +150 °C
Bond-pad metallization: gold.
Backside metallization: none.
Outline Drawing
See application note, Handling GaAs MMIC Die.
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
0.0224
(0.569 mm)
0.0194
V1
V2
J1
CAUTION: Although this device is designed to be as robust as
possible, ESD (Electrostatic Discharge) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
(0.493 mm)
0.0030
J3
(0.089 mm)
0.0000
J2
0.0080
(0.020 mm)
0.0000
Dimensions in inches (mm). Tolerance 0.001 (0.025 mm).
Bond-pad metallization: gold.
Ordering Information
Model Name
Operating Temperature Range
Ordering Part Number
Package Description
AS193-000 GaAs SPDT switch
-40 °C to +85 °C
AS193-000
Wafer on plastic-ring film frame
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200143 Rev. D • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • January 09, 2007
3