Datasheet > ART2K0FES

ART2K0FES

更新时间： 2024-05-23 22:21:29

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
18页	1688K
描述
Power LDMOS transistor

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ART2K0FES 数据手册

ART2K0FE; ART2K0FES;

ART2K0FEG

Power LDMOS transistor

Rev. 6 — 10 March 2023

Product data sheet

1. Product profile

1.1 General description

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor

has been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Table 1.

Application information

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

41.0

60.0

(W)

(dB)

29.0

26.8

27.5

(%)

CW pulsed ^[1]

CW ^[2]

1600

1750

2180

1650

250

64.0

87.5 to 108

170 to 240

352

83.5

DVB-T ^[3][4]

1500

[1] t_p= 10 s;  = 10 %.

[2] Center band performance numbers across the indicated frequency range.

[3] Typical performance numbers across the indicated frequency range.

[4] Symmetric Ultra Wideband Doherty.

1.2 Features and benefits

 High breakdown voltage enables class E operation up to V_DS= 53 V

 Qualified up to a maximum of V_DS= 65 V

 Characterized from 30 V to 65 V to support a wide range of applications

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

12 3 4 5 6 7...18

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