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ART1K6FH PDF预览

ART1K6FH

更新时间: 2024-05-23 22:21:28
品牌 Logo 应用领域
安谱隆 - AMPLEON /
页数 文件大小 规格书
17页 1620K
描述
Power LDMOS transistor

ART1K6FH 数据手册

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ART1K6FH; ART1K6FHS;  
ART1K6FHG  
Power LDMOS transistor  
Rev. 3 — 8 July 2022  
Product data sheet  
1. Product profile  
1.1 General description  
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor  
has been designed to cover a wide range of applications for ISM, broadcast and  
communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.  
Table 1.  
Application information  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
(MHz)  
(W)  
(dB)  
28.7  
29.5  
20.0  
(%)  
77.3  
76.0  
68.0  
CW pulsed [1]  
CW pulsed [1]  
CW pulsed [2]  
108  
108  
352  
1400  
1600  
1200  
55  
50  
[1] Production circuit: tp = 100 s; = 10 %.  
[2] Application circuit: tp = 100 s; = 10 %.  
1.2 Features and benefits  
High breakdown voltage enables class E operation at VDS = 48 V  
Suitable for VDS = 50 and 55 V  
Qualified up to a maximum of VDS = 55 V  
Characterized from 30 V to 55 V for extended power range  
Easy power control  
Integrated dual sided ESD protection enables class C operation and complete switch  
off of the transistor  
Excellent ruggedness with no device degradation  
High efficiency  
Excellent thermal stability  
Designed for broadband operation  
For RoHS compliance see the product details on the Ampleon website  

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