Datasheet > AQV414EAZ

AQV414EAZ

更新时间： 2024-01-14 02:29:31

品牌	Logo	应用领域
NAIS		继电器
页数	文件大小	规格书
3页	58K
描述
PhotoMOS RELAYS

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AQV414EAZ 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	控制电流：	0.0006 A
控制电压：	1.14 V	输入类型：	DC
JESD-609代码：	e0	最高工作温度：	85 °C
最低工作温度：	-40 °C	输出电路类型：	MOSFET
总高度：	2.1 mm	总长度：	6.3 mm
子类别：	Solid State Relays	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

AQV414EAZ 数据手册

AQV414E, AQV41❍EH

2. Electrical characteristics (Ambient temperature: 25°C 77°F)

Type of

Item

Symbol connec- AQV414E(A) AQV410EH(A) AQV414EH(A)

tion

Condition

Typical

1.45 mA

1.9 mA

3.0 mA

0.4 mA

1.8 mA

1.75 mA

LED operate (OFF) current

LED reverse (ON) current

LED dropout voltage

I^Foff

I^Fon

V^F

—

I^L= Max.

Maximum

Minimum

Typical

0.3 mA

Input

I^L= Max.

I^F= 5 mA

1.40 mA

1.70 mA

Typical

1.14 V (1.25 V at I^F= 50 mA)

1.5 V

Maximum

Typical

26 Ω

50 Ω

20 Ω

25 Ω

18 Ω

35 Ω

25.2 Ω

I^F= 0 mA

I^L= Max.

Within 1 s on time

R^on

Maximum

Typical

50 Ω

19 Ω

25 Ω

13 Ω

I^F= 0 mA

I^L= Max.

Within 1 s on time

On resistance

Maximum

17.5 Ω

Output

I^F= 0 mA

I^L= Max.

Within 1 s on time

Typical

10 Ω

6.5 Ω

8.8 Ω

10 Ω

Maximum

12.5 Ω

I^F= 5 mA

V^L= Max.

Off state leakage current

Operate

Maximum

I^Leak

T^off

—

1 µA

10 µA

Typical

0.7 ms

2.0 ms

0.1 ms

1.0 ms

0.8 pF

1.5 ms

3.0 ms

0.3 ms

1.5 ms

0.8 pF

1.5 pF

1.3 ms

3.0 ms

0.3 ms

1.5 ms

0.8 pF

I^F= 0 mA ➝ 5 mA

I^L= Max.

(OFF) time*

Maximum

Typical

Switching

speed

Reverse

I^F= 5 mA ➝ 0 mA

I^L= Max.

T^on

—

(ON) time*

Transfer

characteristics

Maximum

Typical

f = 1 MHz

V^B= 0

I/O capacitance

C^iso

R^iso

—

Maximum

Initial I/O isolation

resistance

Minimum

1,000 MΩ

500 V DC

Note: Recommendable LED forward current

Standard type I^F= 5 mA

For type of connection, see Page 32.

Reinforced type I^F= 5 to 10 mA

*Operate/Reverse time

Input

Output

10%

90%

Toff

Ton

■For Dimensions, see Page 27.

■For Schematic and Wiring Diagrams, see Page 32.

■For Cautions for Use, see Page 36.

REFERENCE DATA

1. Load current vs. ambient temperature char-

acteristics

2. On resistance vs. ambient temperature char-

acteristics

3.Operate (OFF) time vs.ambient temperature

characteristics

Allowable ambient temperature: –40°C to +85°C

–40°F to +185°F

Type of connection: A

Measured portion: between terminals 4 and 6;

LED current: 0 mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

LED current: 5mA; Load voltage: Max. (DC);

Continuous load current: Max. (DC)

140

5.0

4.0

AQV410EH

120

AQV414E(H)

100

AQV410EH

3.0

AQV414(EH)

AQV414EH

2.0

AQV410EH

1.0

AQV414E

–40 –20

20 40

8085

–40 –20

8085 100

–40 –20

20 40

60 8085

Ambient temperature, °C

126

123

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与AQV414EAZ相关器件

型号	品牌	描述	获取价格	数据表
AQV414EH	NAIS	PhotoMOS RELAYS	获取价格
AQV414EHA	NAIS	PhotoMOS RELAYS	获取价格
AQV414EHA	PANASONIC	Transistor Output SSR, 1-Channel, 5000V Isolation, DIP-6	获取价格
AQV414EHAX	NAIS	PhotoMOS RELAYS	获取价格
AQV414EHAZ	NAIS	PhotoMOS RELAYS	获取价格
AQV414EHAZ	PANASONIC	Transistor Output SSR, 1-Channel, 5000V Isolation, DIP-6	获取价格

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