Datasheet > AQV414EHA

AQV414EHA

更新时间： 2024-11-23 22:15:59

品牌	Logo	应用领域
NAIS		光电继电器输出元件
页数	文件大小	规格书
3页	58K
描述
PhotoMOS RELAYS

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中文翻译

获取价格

数据手册

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AQV414EHA 数据手册

TESTING

VDE

(Standard type)

(Reinforced type)

GU (General Use)-E Type

[1-Channel (Form B) Type]

PhotoMOS

RELAYS

4. Low-level off state leakage current

The SSR has an off state leakage current

of several milliamperes, whereas the Pho-

toMOS relay has only 100 pA even with

the rated load voltage of 400 V

(AQV414E).

5. Reinforced insulation 5,000 V type

also available.

More than 0.4 mm internal insulation dis-

tance between inputs and outputs. Con-

forms to EN41003, EN60950 (reinforced

insulation).

6.4±0.05

.252±.002

Cross section of the normally-closed type of

power MOS

8.8±0.05

.346±.002

3.9±0.2

Passivation membrane

.154±.008

Intermediate

Source electrode Gate electrode

insulating

6.4±0.05

membrane

8.8±0.05

.252±.002

.346±.002

Gate

3.6±0.2

oxidation

membrane

.142±.008

–

Drain

mm inch

electrode

2. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

FEATURES

1. Low on resistance for normally-

closed type

This has been realized thanks to the built-

in MOSFET processed by our proprietary

method, DSD (Double-diffused and Se-

lective Doping) method.

3. High sensitivity, low ON resistance

Can control a maximum 0.13 A load cur-

rent with a 5 mA input current. Low ON re-

sistance of 18 Ω (AQV410EH). Stable

operation because there are no metallic

contact parts.

TYPICAL APPLICATIONS

• Security equipment

• Telepone equipment (Dial pulse)

• Measuring equipment

TYPES

Part No.

Output rating*

Packing quantity

Through hole

terminal

Surface-mount terminal

Tape and reel packing style

Picked from the Picked from the

I/O isolation

voltage

Type

Load

Tube packing style

Tube

Tape and reel

1,000 pcs.

voltage current

1/2/3-pin side

4/5/6-pin side

1,500 V AC

(Standard)

1 tube contains

50 pcs.

400 V 120 mA

AQV414E

AQV414EA

AQV414EAX

AQV414EAZ

AC/DC

type

350 V 130 mA AQV410EH

400 V 120 mA AQV414EH

AQV410EHA AQV410EHAX AQV410EHAZ 1 batch contains

5,000 V AC

(Reinforced)

500 pcs.

AQV414EHA AQV414EHAX AQV414EHAZ

*Indicate the peak AC and DC values.

Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Type of

connection

Item

Symbol

AQV414E(A) AQV410EH(A) AQV414EH(A)

Remarks

LED forward current

LED reverse voltage

Peak forwrd current

Power dissipation

I^F

50 mA

3 V

V^R

I^FP

Pⁱⁿ

V^L

Input

1 A

f = 100 Hz, Duty factor = 0.1%

75 mW

Load voltage (peak AC)

400 V

0.12 A

0.13 A

0.15 A

350 V

0.13 A

0.15 A

0.17 A

400 V

0.12 A

0.13 A

0.15 A

A connection: Peak AC, DC

B,C connection: DC

Continuous load current

I^L

Output

A connection: 100 ms (1 shot),

V^L= DC

Peak load current

Power dissipation

I^peak

0.3 A

0.4 A

0.3 A

P^out

P^T

500 mW

550 mW

Total power dissipation

I/O isolation voltage

V^iso

1,500 V AC

5,000 V AC

Non-condensing at low

temperatures

Operating

Storage

T^opr

T^stg

–40°C to +85°C –40°F to +185°F

–40°C to +100°C –40°F to +212°F

Temperature

limits

125

12 3

中文翻译

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与AQV414EHA相关器件

型号	品牌	获取价格	描述	数据表
AQV414EHAX	NAIS	获取价格	PhotoMOS RELAYS
AQV414EHAZ	NAIS	获取价格	PhotoMOS RELAYS
AQV414EHAZ	PANASONIC	获取价格	Transistor Output SSR, 1-Channel, 5000V Isolation, DIP-6
AQV414S	PANASONIC	获取价格	Transistor Output SSR, 1-Channel, 1500V Isolation, SOP-6
AQV414SX	PANASONIC	获取价格	Transistor Output SSR, 1-Channel, 1500V Isolation, SOP-6
AQV414SZ	PANASONIC	获取价格	Transistor Output SSR, 1-Channel, 1500V Isolation, SOP-6
AQV45	PANASONIC	获取价格	PhotoMOS Relay Dimensions
AQV453	NAIS	获取价格	HE (High-function Economy) Type 1- Channel (Form B) Type
AQV453A	NAIS	获取价格	HE (High-function Economy) Type 1- Channel (Form B) Type
AQV453AX	NAIS	获取价格	HE (High-function Economy) Type 1- Channel (Form B) Type

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