Datasheet > AP85U03GMT

AP85U03GMT

更新时间： 2024-02-15 02:06:05

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	167K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP85U03GMT 数据手册

AP85U03GMT

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

5mΩ

82A

▼ SO-8 Compatible

▼ Low On-resistance

Description

The Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

□

on-resistance and cost-effectiveness.

The GEMPAK package is special for DC-DC converters application and

the foot print is compatible with SO-8 with backside heat sink.

GEMPAK

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

Continuous Drain Current

Continuous Drain Current³

Pulsed Drain Current¹

200

P_D@T_C=25℃

P_D@T_A=25℃

E_AS

Total Power Dissipation

℃

Total Power Dissipation

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

57.6

-55 to 150

T_STG

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient³

Max.

2.5

Rthj-a

Data & specifications subject to change without notice

201008072-1/4

12 3 4 5

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