Datasheet > AP2145_10

AP2145_10

更新时间： 2022-10-10 23:58:32

品牌	Logo	应用领域
美台 - DIODES		开关电源开关输出元件
页数	文件大小	规格书
13页	396K
描述
0.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE

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AP2145_10 数据手册

AP2145/AP2155

0.5A SINGLE CHANNEL CURRENT-LIMITED POWER

SWITCH WITH OUTPUT DISCHARGE

Recommended Operating Conditions

Symbol

Parameter

Min

2.7

Max

5.5

Unit

Input voltage

V_IN

I_OUT

T_A

Output Current

500

°C

Operating Ambient Temperature

-40

Electrical Characteristics (T_A= 25^oC, V_IN= +5.0V, unless otherwise stated)

Symbol

V_UVLO

I_SHDN

I_Q

Parameter

Input UVLO

Test Conditions

Min

Typ.

1.9

0.5

Max

Unit

R_load=1kΩ

1.6

2.5

Input Shutdown Current

Input Quiescent Current

Disabled, OUT = open

μA

Enabled, OUT = open

I_LEAKInput Leakage Current

I_REVReverse Leakage Current

Disabled, OUT grounded

Disabled, V_IN= 0V, V_OUT= 5V, I_REVat V_IN

-1

μA

MSO-8-EP

SO-8

V_IN= 3.3V, I_OUT= 0.5A, -40^oC≤ T_A≤85^oC

140

mΩ

_IN= 5V, I_OUT= 0.5A, -

40^oC≤ T_A≤85^oC

R_DS(ON)Switch on-resistance

120

0.7

160

mΩ

I_SHORTShort-Circuit Current Limit

I_LIMITOver-Load Current Limit

Enabled into short circuit, C_IN=10μF, C_L=100μF

V_IN= 5V, V_OUT= 4.5V, C_IN=10μF, C_L=100μF, -

40^oC≤ T_A≤85^oC

0.6

0.8

1.0

Current limiting trigger

threshold

Output Current Slew rate (<100A/s), C_IN=10μF,

C_L=22μF

I_Trig

V_OUT= 0V to I_OUT= I_LIMIT(short applied to output),

T_SHORTShort-Circuit Response Time

μs

C_L=100μF

V_IL

V_IH

EN Input Logic Low Voltage V_IN= 2.7V to 5.5V

EN Input Logic High Voltage V_IN= 2.7V to 5.5V

0.8

I_SINK

EN Input leakage

V_EN= 5V

μA

Ω

I_O-LEAKOutput Leakage Current

T_D(ON)Output turn-on delay time

Disabled

0.05

0.6

0.01

0.05

C_L=1μF, R_load=10Ω

T_R

T_D(OFF)Output turn-off delay time

T_FOutput turn-off fall time

R_FLGFLG output FET on-resistance

Output turn-on rise time

1.5

0.1

_IN= 3.3V or 5V, C_IN=10μF, I_FLG=10mA

I_FLG

FLG Leakage Current

V_FLG= 5V

μA

°C

T_BlankFLG blanking time

V_IN= 3.3V or 5V, C_IN=10μF, C_L=100μF

T_SHDNThermal Shutdown Threshold Enabled, R_load=1kΩ

135

T_HYSThermal Shutdown Hysteresis

SO-8 (Note 3)

110

^oC/W

Thermal Resistance Junction-

to-Ambient

θ_JA

MSO-8-EP (Note 4)

^oC/W

Notes:

3. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.

4. Test condition for MSO-8-EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer

and thermal vias to bottom layer ground plane.

3 of 13

www.diodes.com

September 2010

AP2145/AP2155

Document number: DS32031 Rev. 2 - 2

1 234 5 6 7...13

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