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AMP04FSZ-REEL PDF预览

AMP04FSZ-REEL

更新时间: 2024-02-27 00:54:39
品牌 Logo 应用领域
亚德诺 - ADI 仪表放大器
页数 文件大小 规格书
16页 513K
描述
IC INSTRUMENTATION AMPLIFIER, 900 uV OFFSET-MAX, 0.7 MHz BAND WIDTH, PDSO8, SOIC-8, Instrumentation Amplifier

AMP04FSZ-REEL 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DIE
包装说明:DIE, DIE OR CHIP针数:0
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.31.00.01风险等级:5.7
Is Samacsys:N放大器类型:INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB):0.04 µA标称带宽 (3dB):0.7 MHz
最小共模抑制比:55 dB最大输入失调电流 (IIO):0.01 µA
最大输入失调电压:300 µVJESD-30 代码:R-XUUC-N8
负供电电压上限:标称负供电电压 (Vsup):
功能数量:1端子数量:8
最高工作温度:25 °C最低工作温度:25 °C
封装主体材料:UNSPECIFIED封装代码:DIE
封装等效代码:DIE OR CHIP封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
电源:5/+-15 V认证状态:Not Qualified
筛选级别:MIL-STD-883 Class B (Modified)标称压摆率:0.12 V/us
子类别:Instrumentation Amplifier最大压摆率:0.7 mA
供电电压上限:36 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:OTHER
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压增益:1000
最小电压增益:1标称电压增益:10
Base Number Matches:1

AMP04FSZ-REEL 数据手册

 浏览型号AMP04FSZ-REEL的Datasheet PDF文件第1页浏览型号AMP04FSZ-REEL的Datasheet PDF文件第2页浏览型号AMP04FSZ-REEL的Datasheet PDF文件第3页浏览型号AMP04FSZ-REEL的Datasheet PDF文件第5页浏览型号AMP04FSZ-REEL的Datasheet PDF文件第6页浏览型号AMP04FSZ-REEL的Datasheet PDF文件第7页 
AMP04  
AMP04E  
Typ Max  
AMP04F  
Typ Max Units  
Parameter  
Symbol  
Conditions  
Min  
Min  
GAIN (G = 100 K/RGAIN  
)
Gain Equation Accuracy  
G = 1 to 100  
G = 1000  
0.2  
0.4  
0.5  
0.75  
%
%
0.75  
G = 1 to 100  
–40°C TA +85°C  
0.8  
1.0  
%
Gain Range  
Nonlinearity  
G
1
1000  
1
1000 V/V  
G = 1, RL = 5 kΩ  
G = 10, RL = 5 kΩ  
G = 100, RL = 5 kΩ  
0.005  
0.015  
0.025  
30  
0.005  
0.015  
0.025  
50  
%
%
%
Gain Temperature Coefficient  
G/T  
ppm/°C  
OUTPUT  
Output Voltage Swing High  
VOH  
RL = 2 kΩ  
RL = 2 kΩ  
–40°C TA +85°C  
RL = 2 kΩ  
–40°C TA +85°C  
Sink  
+13  
+13.4  
+13  
V
V
+12.5  
+12.5  
Output Voltage Swing Low  
Output Current Limit  
VOL  
–14.5  
–14.5  
V
mA  
mA  
30  
15  
30  
15  
Source  
NOISE  
Noise Voltage Density, RTI  
eN  
f = 1 kHz, G = 1  
f = 1 kHz, G = 10  
270  
45  
30  
25  
4
5
1
0.5  
270  
45  
30  
25  
4
5
1
0.5  
nV/Hz  
nV/Hz  
nV/Hz  
nV/Hz  
pA/Hz  
µV p-p  
µV p-p  
µV p-p  
f = 100 Hz, G = 100  
f = 100 Hz, G = 1000  
f = 100 Hz, G = 100  
0.1 to 10 Hz, G = 1  
0.1 to 10 Hz, G = 10  
0.1 to 10 Hz, G = 100  
Noise Current Density, RTI  
Input Noise Voltage  
iN  
N p-p  
e
DYNAMIC RESPONSE  
Small Signal Bandwidth  
BW  
ISY  
G = 1, –3 dB  
700  
700  
kHz  
POWER SUPPLY  
Supply Current  
750 900  
1100  
900  
µA  
1100 µA  
–40°C TA +85°C  
Specifications subject to change without notice.  
(VS = +5 V, VCM = +2.5 V, TA = +25؇C unless otherwise noted)  
WAFER TEST LIMITS  
Parameter  
Symbol  
Conditions  
Limit  
Units  
OFFSET VOLTAGE  
Input Offset Voltage  
Output Offset Voltage  
VIOS  
VOOS  
300  
3
µV max  
mV max  
INPUT CURRENT  
Input Bias Current  
Input Offset Current  
IB  
IOS  
40  
10  
nA max  
nA max  
INPUT  
Common-Mode Rejection  
CMR  
CMR  
0 V VCM 3.0 V  
G = 1  
G = 10  
G = 100  
G = 1000  
VS = ±15 V, –12 V VCM +12 V  
55  
75  
80  
80  
dB min  
dB min  
dB min  
dB min  
Common-Mode Rejection  
G = 1  
G = 10  
G = 100  
55  
75  
80  
dB min  
dB min  
dB min  
–4–  
REV. A  

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