Biasing and Operation
fit used to calculate at any
temperature. This method
gives an error close to the
method #1.
bond wire is normally
sufficient for signal
The recommended quiescent
DC bias condition for optimum
efficiency, performance, and
reliability is Vd=5.5 volts with
Vg set for Id=950 mA. Minor
improvements in performance
are possible depending on the
application. The drain bias
voltage range is 3 to 5.5V. A
single DC gate supply
connected to Vg will bias all
gain stages. Muting can be
accomplished by setting Vg and
/or Vg to the pinch-off voltage
Vp.
connections, however double
bonding with 0.7 mil gold wire
or use of gold mesh [2] is
recommended for best
performance, especially near
the high end of the frequency
band.
The RF ports are AC coupled
at the RF input to the first
stage and the RF output of the
final stage. No ground wired
are needed since ground
connections are made with
plated through-holes to the
backside of the device.
Thermosonic wedge bonding is
preferred method for wire
attachment to the bond pads.
Gold mesh can be attached
using a 2 mil round tracking
tool and a tool force of
approximately 22 grams and a
ultrasonic power of roughly 55
dB for a duration of 76 +/- 8
mS. The guided wedge at an
untrasonic power level of 64
dB can be used for 0.7 mil
wire. The recommended wire
bond stage temperature is 150
+/- 2C.
Assembly Techniques
The backside of the MMIC chip
is RF ground. For microstrip
applications the chip should be
attached directly to the ground
plane (e.g. circuit carrier or
heatsink) using electrically
conductive epoxy [1]
An optional output power
detector network is also
provided. The differential
voltage between the Det-Ref
and Det-Out pads can be
correlated with the RF power
emerging from the RF output
port. The detected voltage is
given by :
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plate metal
shim (same length and width
as the MMIC) under the chip
which is of correct thickness
to make the chip and adjacent
circuit the same height. The
amount of epoxy used for the
chip and/or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip
or shim. The ground plain
should be free of any residue
that may jeopardize electrical
or mechanical attachment.
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly
V =
Vref −Vdet
−Vofs
V
where
DET _ R
the
is the voltage at the
port, Vdet is a voltage at
temperature and time.
ref
The chip is 100um thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface and
should be handled by the
edges or with a custom collet
(do not pick up the die with a
vacuum on die center).
V
port, and ofs is the
DET _ O
zero-input-power offset
voltage. There are three
methods to calculate :
Vofs
1.
can be measured before
each detector measurement
(by removing or switching
off the power source and
measuring ). This method
gives an error due to
This MMIC is also static
sensitive and ESD precautions
should be taken.
temperature drift of less
than 0.01dB/50°C.
Notes:
[1] Ablebond 8ꢀ-1 LM1 silver epoxy is
recommended.
[2] Buckbee-Mears Corporation, St. Paul, MN,
800-262-382ꢀ
The location of the RF bond
pads is shown in Figure 12.
Note that all the RF input and
output ports are in a Ground-
Signal configuration.
Vofs
2.
3.
can be measured at a
single reference temperature.
The drift error will be less
than 0.25dB.
Vofs
can either be
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single
characterized over
temperature and stored in a
lookup table, or it can be
measured at two
temperatures and a linear
5
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一文带你了解TPS5430资料手册分析：参数介绍、引脚配置说明
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