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AMMC-6120-W50 PDF预览

AMMC-6120-W50

更新时间: 2024-02-08 18:28:26
品牌 Logo 应用领域
安华高科 - AVAGO 射频微波
页数 文件大小 规格书
8页 175K
描述
8000MHz - 20000MHz RF/MICROWAVE FREQUENCY DOUBLER, 0.064 X 0.040 INCH, DIE

AMMC-6120-W50 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:DIE OR CHIPReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.82Is Samacsys:N
特性阻抗:50 Ω构造:MODULE
最大输入功率 (CW):15 dBm最大工作频率:20000 MHz
最小工作频率:8000 MHz封装等效代码:DIE OR CHIP
电源:5 V射频/微波设备类型:FREQUENCY DOUBLER
子类别:RF/Microwave Frequency Multipliers最大压摆率:105 mA
Base Number Matches:1

AMMC-6120-W50 数据手册

 浏览型号AMMC-6120-W50的Datasheet PDF文件第1页浏览型号AMMC-6120-W50的Datasheet PDF文件第3页浏览型号AMMC-6120-W50的Datasheet PDF文件第4页浏览型号AMMC-6120-W50的Datasheet PDF文件第5页浏览型号AMMC-6120-W50的Datasheet PDF文件第6页浏览型号AMMC-6120-W50的Datasheet PDF文件第7页 
[1]  
AMMC-6120 DC Specifications/Physical Properties  
Symbol  
Idq  
Parameters and Test Conditions  
Units  
mA  
V
Min.  
80  
Typ.  
85  
Max.  
105  
-1.0  
Drain Supply Current  
Vg  
Gate Supply Operating Voltage  
-1.5  
-1.4  
qch-b  
Thermal Resistance[2]  
(Backside Temperature, Tb = 25°C)  
°C/W  
25  
Notes:  
1. Ambient operational temperature T = 25°C unless otherwise noted.  
A
2. Channel-to-backside Thermal Resistance (q  
) = 26°C/W at T (T ) = 34°C as measured using infrared microscopy. Thermal Resistance at  
ch-b channel c  
backside temperature (T ) = 25°C calculated from measured data.  
b
[3,4,5]  
AMMC-6120 RF Specifications  
T = 25°C, V = 5 V, V =-1.4V, I  
= 85 mA, Z = 50 Ω  
o
A
dd  
g
d(Q)  
Symbol Parameters and Test Conditions  
Units  
GHz  
GHz  
dBm  
dBc  
Minimum  
Typical  
4 to 10  
8 to 24  
14  
Maximum  
Sigma  
Fin  
Fout  
Po  
Input Frequency  
Output Frequency  
Output Power[4]  
10.5  
18  
0.6  
1.8  
Fo  
Fundamental Isolation  
(referenced to Po)  
25  
3Fo  
3rd Harmonic Isolation  
(referenced to Po)  
dBc  
25  
2.5  
P-1dB  
RLin  
RLout  
SSB  
Input Power at 1dB Gain Compression  
Input Return Loss[6]  
Output Return Loss[6]  
dBm  
dB  
+1  
-15  
-9  
dB  
Single Sideband Phase Noise  
(100 KHz offset)  
DBc/Hz  
-135  
Notes:  
3. Small/Large -signal data measured in wafer form T = 25°C.  
A
4. 100% on-wafer RF test is done at Pin = +3 dBm, output frequency = 10, 16, and 20 GHz.  
5. Specifications are derived from measurements in a 50-W test environment. Aspects of the multiplier performance may be improved over a  
more narrow bandwidth by application of additional matching.  
2

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