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AMIS30663CANG2G PDF预览

AMIS30663CANG2G

更新时间: 2024-01-19 11:07:56
品牌 Logo 应用领域
安森美 - ONSEMI 网络接口电信集成电路电信电路光电二极管PC
页数 文件大小 规格书
11页 163K
描述
High Speed CAN Transceiver

AMIS30663CANG2G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01Factory Lead Time:20 weeks
风险等级:1.11数据速率:1000 Mbps
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9276 mm湿度敏感等级:2
功能数量:1端子数量:8
收发器数量:1最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.7272 mm
子类别:Network Interfaces最大压摆率:0.065 mA
标称供电电压:5 V表面贴装:YES
电信集成电路类型:INTERFACE CIRCUIT温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.937 mm

AMIS30663CANG2G 数据手册

 浏览型号AMIS30663CANG2G的Datasheet PDF文件第4页浏览型号AMIS30663CANG2G的Datasheet PDF文件第5页浏览型号AMIS30663CANG2G的Datasheet PDF文件第6页浏览型号AMIS30663CANG2G的Datasheet PDF文件第8页浏览型号AMIS30663CANG2G的Datasheet PDF文件第9页浏览型号AMIS30663CANG2G的Datasheet PDF文件第10页 
AMIS30663  
Table 7. DC Characteristics  
(V = 4.75 to 5.25 V; V = 2.9 V to 3.6 V; T  
= 40 to +150°C; R = 60 W unless specified otherwise.)  
LT  
CC  
33  
junc  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
Bus Lines (pins CANH and CANL)  
R
C
C
C
Differential input resistance  
25  
50  
7.5  
75  
20  
KW  
pF  
pF  
pF  
mA  
mA  
mV  
i(dif)  
Input capacitance at pin CANH  
Input capacitance at pin CANL  
Differential input capacitance  
Input leakage current at pin CANH  
Input leakage current at pin CANL  
V
V
V
= V ; not tested  
CC  
i(CANH)  
i(CANL)  
i(dif)  
TxD  
TxD  
TxD  
= V ; not tested  
7.5  
20  
CC  
= V ; not tested  
3.75  
170  
170  
10  
CC  
I
V
CC  
= 0 V; V  
= 5 V  
= 5 V  
10  
10  
250  
250  
500  
LI(CANH)  
LI(CANL)  
CANH  
CANL  
I
V
CC  
= 0 V; V  
Commonmode peak during transition  
from dom rec or rec dom  
Figures 8 and 9  
500  
VCMpeak  
VCMstep  
Difference in commonmode between  
dominant and recessive state  
Figures 8 and 9  
150  
150  
mV  
Power on Reset  
PORL  
POR level  
2.2  
3.5  
4.7  
V
CANH, CANL, Vref in tri−  
state below POR level  
Thermal Shutdown  
shutdown junction temperature  
Timing Characteristics (see Figures 6 and 7)  
T
j(sd)  
150  
160  
180  
°C  
t
t
t
t
t
Delay TxD to bus active  
Delay TxD to bus inactive  
Delay bus active to RxD  
Delay bus inactive to RxD  
40  
30  
85  
60  
110  
110  
110  
135  
230  
ns  
ns  
ns  
ns  
ns  
d(TxDBUSon)  
d(TxDBUSoff)  
d(BUSonRxD)  
d(BUSoffRxD)  
pd(recdom)  
25  
55  
65  
100  
Propagation delay TxD to RxD from  
recessive to dominant  
100  
t
t
Propagation delay TxD to RxD from  
dominant to recessive  
100  
250  
245  
750  
ns  
d(domrec)  
TxD dominant time for time out  
V
TxD  
= 0 V  
450  
ms  
dom(TxD)  
7. Not tested on ATE.  
Table 8. Digital Output Characteristics @ V33 = 2.5 V  
(V = 4.75 to 5.25 V; V = 2.5 V 5%; T  
= 40 to +150°C; R = 60 W unless specified otherwise.)  
CC  
33  
junc  
LT  
Symbol  
Receiver Data Output (pin RxD)  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
I
HIGHlevel output current  
LOWlevel output current  
V
V
> 0.9 x V  
2.6  
mA  
mA  
oh  
ol  
OH  
33  
I
< 0.1 x V  
4
OL  
33  
http://onsemi.com  
7

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