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AMIS-732512 PDF预览

AMIS-732512

更新时间: 2024-02-15 11:26:27
品牌 Logo 应用领域
AMI 光电二极管光电二极管
页数 文件大小 规格书
9页 285K
描述
50レm-pitch Wide Aperture Spectroscopic Photodiode Arrays

AMIS-732512 技术参数

生命周期:TransferredReach Compliance Code:compliant
HTS代码:8541.40.60.50风险等级:5.01
Is Samacsys:N配置:SINGLE
最大暗电源:600 nA红外线范围:NO
功能数量:1峰值波长:600 nm
形状:RECTANGULAR尺寸:25.6 mm
Base Number Matches:1

AMIS-732512 数据手册

 浏览型号AMIS-732512的Datasheet PDF文件第1页浏览型号AMIS-732512的Datasheet PDF文件第3页浏览型号AMIS-732512的Datasheet PDF文件第4页浏览型号AMIS-732512的Datasheet PDF文件第5页浏览型号AMIS-732512的Datasheet PDF文件第6页浏览型号AMIS-732512的Datasheet PDF文件第7页 
AMIS-732128, AMIS-732256, AMIS-732512  
Data Sheet  
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays  
3.0 Sensor Characteristics  
AMI Semiconductor’s self-scanned WSN photodiodes are spaced on a 50µm pitch. The line density is 20 diodes/mm and accordingly  
the overall die lengths of the different arrays vary with the number of photodiodes. For example, the 128 pixel array is 6.4mm long, the  
256 pixel array is 12.8mm long and the 512 pixel array is 25.6mm long. Each array has four additional dummy photodiodes. On each  
side, there is one dark (non-imaging) dummy photodiode and one imaging dummy photodiode. The height of the sensors is 2500µm.  
The tall, narrow apertures make these sensors desirable for use in monochromators and spectrographs.  
Figure 2: Geometry and Layout of Photodiode Pixels  
During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored  
on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the  
stored signal charge as function of light exposure at a wavelength of 575nm. The exposure is the product of the light intensity in  
nW/cm2 and integration time in seconds. The charge accumulates linearly until reaching the saturation charge, and the corresponding  
exposure is the saturation exposure.  
The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a  
photodiode is 3.5×10-4 C/J/cm2 at 575nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength.  
AMI Semiconductor – Dec. 05, M-20491-001  
2
www.amis.com  

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