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AMIS-720341-A PDF预览

AMIS-720341-A

更新时间: 2024-02-13 19:57:51
品牌 Logo 应用领域
AMI 传感器换能器图像传感器
页数 文件大小 规格书
16页 1243K
描述
Contact Image Sensor

AMIS-720341-A 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
Base Number Matches:1

AMIS-720341-A 数据手册

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AMIS-720341-A: Contact Image Sensor  
Data Sheet  
6.0 Two Test Setups for Specifications and Performance  
6.1 First Setup  
The standard specifications are the image sensor tests that are performed on the wafer probe machine, where each device on the  
wafer is tested in production. However, the data in these measurements are measured with a clock frequency at a fixed 500kHz. Since  
the pixel rate is equal to the clock rate, the pixel rate is also at 500kHz. The specification under Section 7.0 is the wafer probe  
specifications, Table 2.  
6.2 Second Setup  
The CIS modules made with these devices operate in excess of 5.0MHz. Accordingly, the wafer probe specifications are supplemented  
with high frequency clocking performance using an A6 length module’s PCB board.  
7.0 Electro-Optical Characteristics (25°C)  
The electro-optical characteristics of the AMIS-720341-A imaging sensor chip are listed in Table 2. This is the wafer probe specification  
used to test each die at 25°C.  
Table 2: Electro-Optical Characteristics  
Parameters  
Symbols  
Typical  
128  
~83.3  
128/Fclk  
500  
Units  
Elements  
µm  
µs/line  
kHz  
Notes  
Number of photo-elements  
Pixel-to-pixel spacing  
Line scanning rate  
Clock frequency  
(1)  
Tint  
Fclk (2)  
See Note 2 for higher clock speed  
(max. 5MHz)  
Output voltage  
Output voltage non-uniformity  
Dark output voltage  
Dark output non-uniformity  
Adjacent pixel non-uniformity  
Chip-to-chip non-uniformity  
Notes:  
Vpavg (3)  
Up (4)  
1.85 ± 0.35  
± 7.5  
V
%
mV  
mV  
%
(5)  
Vd  
Ud  
<100  
<100  
<6.5  
± 5  
(6)  
Upadj (7)  
Ucc (8)  
%
(1) Tint stands for the line scanning rate or the integration time. It is determined by the time interval between two SPs, where the SPs start the line-scan process, as  
soon as the CP, module clock, acquires it and shifts it into the internal shift register. The minimum integration time in one line scan of the sensor is the number of  
pixel sites divided by its clock frequency. In a CIS module it is the number of sensors times the number of pixels in the sensor, all over the clock frequency. Tint in  
the wafer probe is set with the calibration procedure used to set the amplitude of Vpavg, see Note 3.  
(2) Fclk is the device’s clock, CP, frequency and it is also equal to the pixel rate. In the wafer test, Fclk is set to 500kHz. However, AMIS has been successfully mass-  
producing high frequency CIS modules, using only the wafer test to qualify them. Hence, the devices are constantly tested for their standard high-speed  
performance with each of the A6 modules in production. These module production tests have proven that the low speed wafer probe tests are sufficient to  
produce reliable image devices.  
(3) Vpavg = Vp(n)/Npixels (average level in one line scan)  
Where Vp(n) is the amplitude of nth pixel in the sensor chip and Npixels is the total number of pixels in sensor chip.  
Vpavg is converted from impulse current video pixel into a voltage output. See Figure 4, in Section 4.0. and Figure 5, in Section 5.0. There is a calibration  
procedure to calibrate Vpavg using tint as the variable to control the exposure. Hence, Vpavg is calibrated for each image sensor type to compensate for the  
probe card variations, as well as the interfacing circuits to the wafer probe machine.  
(4) Up is the uniformity specification, measured under a uniform exposing light exposure. Up = [Vp(max) - Vpavg] / Vpavg x 100% or [Vpavg - Vp(min)] / Vpavg} x  
100%, whichever is greater.  
Where  
Vp(max) is the maximum pixel output voltage in the light.  
Vp(min) is the minimum pixel output voltage in the dark.  
The pixel Vp(n) is one nth pixel in Npixels in the sensor.  
(5) Vd = Vp(n)/Npixels. Where Vp(n) is the pixels signal amplitude of the nth pixel of the sensor. Dark is where the light is off, leaving the image surface unexposed.  
(6) Ud = Vdmax – Vdmin.  
(7) Upadj = MAX[ | (Vp(n) - Vp(n+l) | / Vp(n)) x 100%. Upadj is the non-uniformity in percentage. It is the amplitude difference between two neighboring pixels.  
(8) Ucc is the uniformity specifications, measured among the good die on the wafer. Under uniform light exposure the sensors are measured and calculated with the  
following algorithm: Vpavg of all the good dies on the wafer are averaged and assigned VGpavg. Then the die with maximum Vpavg is assigned Vpavg(max),  
and the one with minimum Vpavg is assigned Vpavg(min). Then UCC = {[Vpavg(max)-Vpavg(min)]/VGpavg}x100.  
AMI Semiconductor – May 06, M-20570-001  
6
www.amis.com  
 
 

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