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AM45DL6408G70FT

更新时间: 2024-01-08 10:12:43
品牌 Logo 应用领域
飞索 - SPANSION 静态存储器内存集成电路
页数 文件大小 规格书
65页 1101K
描述
Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

AM45DL6408G70FT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA,
针数:73Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.33
其他特性:PSEUDO SRAM IS ORGANISED AS 1M X 8 OR 512K X 16; FLASH CAN ALSO BE ORGANISED AS 8M X 8JESD-30 代码:R-PBGA-B73
JESD-609代码:e1长度:11.6 mm
内存密度:67108864 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:73
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:8 mm

AM45DL6408G70FT 数据手册

 浏览型号AM45DL6408G70FT的Datasheet PDF文件第1页浏览型号AM45DL6408G70FT的Datasheet PDF文件第2页浏览型号AM45DL6408G70FT的Datasheet PDF文件第3页浏览型号AM45DL6408G70FT的Datasheet PDF文件第5页浏览型号AM45DL6408G70FT的Datasheet PDF文件第6页浏览型号AM45DL6408G70FT的Datasheet PDF文件第7页 
P R E L I M I N A R Y  
TABLE OF CONTENTS  
Figure 7. Toggle Bit Algorithm........................................................ 33  
DQ2: Toggle Bit II ................................................................... 34  
Reading Toggle Bits DQ6/DQ2 ...............................................34  
DQ5: Exceeded Timing Limits ................................................ 34  
DQ3: Sector Erase Timer ....................................................... 34  
Table 15. Write Operation Status ................................................... 35  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 36  
Figure 8. Maximum Negative Overshoot Waveform ...................... 36  
Figure 9. Maximum Positive Overshoot Waveform........................ 36  
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 37  
CMOS Compatible ..................................................................37  
Figure 10. ICC1 Current vs. Time (Showing Active and  
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5  
MCP Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . 5  
Flash memory Block Diagram . . . . . . . . . . . . . . . 6  
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7  
Special Package Handling Instructions .................................... 7  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9  
MCP Device Bus Operations . . . . . . . . . . . . . . . . .9  
Table 2. Device Bus OperationsFlash Word Mode, CIOf = V ;  
IH  
PSRAM Byte Mode, CIOs = V ....................................................11  
SS  
Table 3. Device Bus OperationsFlash Byte Mode, CIOf = V ;  
SS  
PSRAM Word Mode, CIOs = V ..................................................12  
CC  
Table 4. Device Bus OperationsFlash Byte Mode, CIOf = V ;  
IL  
PSRAM Byte Mode, CIOs = V ....................................................13  
Automatic Sleep Currents)............................................................. 38  
Figure 11. Typical ICC1 vs. Frequency............................................ 38  
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 40  
Figure 12. Test Setup.................................................................... 40  
Figure 13. Input Waveforms and Measurement Levels ................. 40  
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 41  
Pseudo SRAM CE#s Timing ...................................................41  
Figure 14. Timing Diagram for Alternating  
Between Pseudo SRAM to Flash................................................... 41  
Read-Only Operations ...........................................................42  
Figure 15. Read Operation Timings ............................................... 42  
Hardware Reset (RESET#) .................................................... 43  
Figure 16. Reset Timings ............................................................... 43  
Word/Byte Configuration (CIOf) ..............................................44  
Figure 17. CIOf Timings for Read Operations................................ 44  
Figure 18. CIOf Timings for Write Operations................................ 44  
Erase and Program Operations ..............................................45  
Figure 19. Program Operation Timings.......................................... 46  
Figure 20. Accelerated Program Timing Diagram.......................... 46  
Figure 21. Chip/Sector Erase Operation Timings .......................... 47  
Figure 22. Back-to-back Read/Write Cycle Timings ...................... 48  
Figure 23. Data# Polling Timings (During Embedded Algorithms). 48  
Figure 24. Toggle Bit Timings (During Embedded Algorithms)...... 49  
Figure 25. DQ2 vs. DQ6................................................................. 49  
Temporary Sector Unprotect .................................................. 50  
Figure 26. Temporary Sector Unprotect Timing Diagram .............. 50  
Figure 27. Sector/Sector Block Protect and  
Unprotect Timing Diagram ............................................................. 51  
Alternate CE#f Controlled Erase and Program Operations ....52  
Figure 28. Flash Alternate CE#f Controlled Write (Erase/Program)  
Operation Timings.......................................................................... 53  
Power Up Time ....................................................................... 54  
Read Cycle .............................................................................54  
Figure 29. Pseudo SRAM Read CycleAddress Controlled......... 54  
Read Cycle .............................................................................55  
Figure 30. Pseudo SRAM Read Cycle........................................... 55  
Write Cycle .............................................................................56  
Figure 31. Pseudo SRAM Write CycleWE# Control................... 56  
Figure 32. Pseudo SRAM Write CycleCE1#s Control................ 57  
Figure 33. Pseudo SRAM Write Cycle—  
UB#s and LB#s Control.................................................................. 58  
Flash Erase And Programming Performance . . 59  
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 59  
Package Pin Capacitance. . . . . . . . . . . . . . . . . . . 59  
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 59  
SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 60  
Figure 34. CE1#s Controlled Data Retention Mode....................... 60  
SS  
Flash Device Bus Operations . . . . . . . . . . . . . . .13  
Requirements for Reading Array Data ...................................13  
Writing Commands/Command Sequences ............................14  
Accelerated Program Operation ..........................................14  
Autoselect Functions ...........................................................14  
Simultaneous Read/Write Operations with Zero Latency .......14  
Automatic Sleep Mode ...........................................................15  
RESET#: Hardware Reset Pin ...............................................15  
Output Disable Mode .............................................................. 15  
Table 5. Am29DL640G Sector Architecture ....................................15  
Table 6. Bank Address ....................................................................18  
Table 7. SecSi Sector Addresses ...............................................18  
Table 8. Am29DL640G Boot Sector/Sector Block Addresses for Pro-  
tection/Unprotection ........................................................................19  
Write Protect (WP#) ................................................................20  
Table 9. WP#/ACC Modes ..............................................................20  
Temporary Sector Unprotect ..................................................20  
Figure 1. Temporary Sector Unprotect Operation........................... 20  
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 21  
SecSi™ (Secured Silicon) Sector  
Flash Memory Region ............................................................ 22  
Figure 3. SecSi Sector Protect Verify.............................................. 23  
Hardware Data Protection ......................................................23  
Low V Write Inhibit ...........................................................23  
CC  
Write Pulse Glitch” Protection ............................................23  
Logical Inhibit ......................................................................23  
Power-Up Write Inhibit .........................................................23  
Common Flash Memory Interface (CFI) . . . . . . .23  
Flash Command Definitions . . . . . . . . . . . . . . . . 27  
Reading Array Data ................................................................27  
Reset Command .....................................................................27  
Autoselect Command Sequence ............................................27  
Enter SecSi™ Sector/Exit SecSi Sector  
Command Sequence .............................................................. 27  
Byte/Word Program Command Sequence ............................. 28  
Unlock Bypass Command Sequence .................................. 28  
Figure 4. Program Operation .......................................................... 29  
Chip Erase Command Sequence ........................................... 29  
Sector Erase Command Sequence ........................................29  
Erase Suspend/Erase Resume Commands ........................... 30  
Figure 5. Erase Operation............................................................... 30  
Flash Write Operation Status . . . . . . . . . . . . . . . . 32  
DQ7: Data# Polling ................................................................. 32  
Figure 6. Data# Polling Algorithm ................................................... 32  
DQ6: Toggle Bit I ....................................................................33  
May 13, 2003  
Am45DL6408G  
3

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