Datasheet > AM45DL32X8G

AM45DL32X8G

更新时间： 2022-01-18 23:27:00

品牌	Logo	应用领域
其他 - ETC		闪存静态存储器
页数	文件大小	规格书
64页	1122K
描述
Am45DL32x8G - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

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AM45DL32X8G 数据手册

P R E L I M I N A R Y

REVISION SUMMARY

Revision A (June 3, 2002)

Revision A+3 (August 28, 2002)

Initial release.

CFI

Changed the text in the last paragraph to read “read-

ing array data.”

Revision A+1 (June 18, 2002)

CompactCell SRAM DC and Operating

Characteristics

DC Characteristics

Deleted the I_ACCspecification row in table.

Added V_IHand V_ILspecifications and added notes to

table.

Performance Characteristics

Changed 1 million “write” cycles guaranteed to 1 mil-

lion “erase” cycles.

Revision A+2 (July 9, 2002)

Command Definitions (Flash Word Mode)

SRAM Data Retention

Changed 80h to 82h for factory locked and 00h to

002h for not factory locked.

Changed the minimum value of V_CCfor Data Retention

from 2.8 to 1.8.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

August 28, 2002

Am45DL32x8G

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