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AM45DL3208GT85IT PDF预览

AM45DL3208GT85IT

更新时间: 2024-01-14 03:36:20
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路静态存储器
页数 文件大小 规格书
66页 1202K
描述
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

AM45DL3208GT85IT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:73
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.23其他特性:STATIC RAM IS ORGANIZED AS 512K X 16/1M X 8
JESD-30 代码:R-PBGA-B73JESD-609代码:e0
长度:11.6 mm内存密度:33554432 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:73字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

AM45DL3208GT85IT 数据手册

 浏览型号AM45DL3208GT85IT的Datasheet PDF文件第2页浏览型号AM45DL3208GT85IT的Datasheet PDF文件第3页浏览型号AM45DL3208GT85IT的Datasheet PDF文件第4页浏览型号AM45DL3208GT85IT的Datasheet PDF文件第6页浏览型号AM45DL3208GT85IT的Datasheet PDF文件第7页浏览型号AM45DL3208GT85IT的Datasheet PDF文件第8页 
P R E L I M I N A R Y  
TABLE OF CONTENTS  
Figure 6. Data# Polling Algorithm .................................................. 33  
RY/BY#: Ready/Busy# ............................................................ 34  
DQ6: Toggle Bit I .................................................................... 34  
Figure 7. Toggle Bit Algorithm........................................................ 34  
DQ2: Toggle Bit II ................................................................... 35  
Reading Toggle Bits DQ6/DQ2 ............................................... 35  
DQ5: Exceeded Timing Limits ................................................ 35  
DQ3: Sector Erase Timer ....................................................... 35  
Table 17. Write Operation Status ................................................... 36  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 37  
Figure 8. Maximum Negative Overshoot Waveform ...................... 37  
Figure 9. Maximum Positive Overshoot Waveform........................ 37  
Flash DC Characteristics . . . . . . . . . . . . . . . . . . 38  
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5  
MCP Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . 5  
Flash memory Block Diagram . . . . . . . . . . . . . . . 6  
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7  
Special Package Handling Instructions .................................... 7  
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9  
Table 2. Device Bus Operations—Flash Word Mode, CIOf = VIH  
PSRAM Byte Mode, CIOs = VSS ....................................................11  
Table 3. Device Bus Operations—Flash Byte Mode, CIOf = VSS  
;
;
PSRAM Word Mode, CIOs = VCC ..................................................12  
Table 4. Device Bus Operations—Flash Byte Mode, CIOf = VIL;  
PSRAM Byte Mode, CIOs = VSS ....................................................13  
Word/Byte Configuration ........................................................ 13  
CMOS Compatible ..................................................................38  
Figure 10. ICC1 Current vs. Time (Showing Active and  
Automatic Sleep Currents)............................................................. 39  
Figure 11. Typical ICC1 vs. Frequency............................................ 39  
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 41  
Figure 12. Test Setup.................................................................... 41  
Figure 13. Input Waveforms and Measurement Levels ................. 41  
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42  
Pseudo SRAM CE#s Timing ................................................... 42  
Figure 14. Timing Diagram for Alternating  
Requirements for Reading Array Data ................................... 13  
Writing Commands/Command Sequences ............................ 14  
Accelerated Program Operation .......................................... 14  
Autoselect Functions ........................................................... 14  
Simultaneous Read/Write Operations with Zero Latency ....... 14  
Standby Mode ........................................................................ 14  
Automatic Sleep Mode ........................................................... 15  
RESET#: Hardware Reset Pin ............................................... 15  
Between Pseudo SRAM and Flash................................................ 42  
Read-Only Operations ...........................................................43  
Figure 15. Read Operation Timings............................................... 43  
Hardware Reset (RESET#) .................................................... 44  
Figure 16. Reset Timings............................................................... 44  
Word/Byte Configuration (CIOf) .............................................. 45  
Figure 17. CIOf Timings for Read Operations................................ 45  
Figure 18. CIOf Timings for Write Operations................................ 45  
Flash Erase and Program Operations ....................................46  
Figure 19. Program Operation Timings.......................................... 47  
Figure 20. Accelerated Program Timing Diagram.......................... 47  
Figure 21. Chip/Sector Erase Operation Timings .......................... 48  
Figure 22. Back-to-back Read/Write Cycle Timings ...................... 49  
Figure 23. Data# Polling Timings (During Embedded Algorithms). 49  
Figure 24. Toggle Bit Timings (During Embedded Algorithms)...... 50  
Figure 25. DQ2 vs. DQ6................................................................. 50  
Temporary Sector Unprotect .................................................. 51  
Figure 26. Temporary Sector Unprotect Timing Diagram .............. 51  
Figure 27. Sector/Sector Block Protect and  
Unprotect Timing Diagram ............................................................. 52  
Alternate CE#f Controlled Erase and Program Operations .... 53  
Figure 28. Flash Alternate CE#f Controlled Write (Erase/Program)  
Operation Timings.......................................................................... 54  
Power Up Time ....................................................................... 55  
Read Cycle ............................................................................. 55  
Figure 29. Pseudo SRAM Read Cycle—Address Controlled......... 55  
Read Cycle ............................................................................. 56  
Figure 30. Pseudo SRAM Read Cycle........................................... 56  
Write Cycle ............................................................................. 57  
Figure 31. Pseudo SRAM Write Cycle—WE# Control................... 57  
Figure 32. Pseudo SRAM Write Cycle—CE1#s Control................ 58  
Figure 33. Pseudo SRAM Write Cycle—  
Output Disable Mode .............................................................. 15  
Table 5. Top Boot Sector Addresses .............................................15  
Table 7. Bottom Boot Sector Addresses .........................................17  
Sector/Sector Block Protection and Unprotection .................. 19  
Table 9. Top Boot Sector/Sector Block Addresses  
for Protection/Unprotection .............................................................19  
Table 10. Bottom Boot Sector/Sector Block Addresses  
for Protection/Unprotection .............................................................19  
Write Protect (WP#) ................................................................ 20  
Temporary Sector Unprotect .................................................. 20  
Figure 1. Temporary Sector Unprotect Operation........................... 20  
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 21  
SecSi™ (Secured Silicon) Sector  
Flash Memory Region ............................................................ 22  
Figure 3. SecSi Sector Protect Verify.............................................. 23  
Hardware Data Protection ...................................................... 23  
Low VCC Write Inhibit ........................................................... 23  
Write Pulse “Glitch” Protection ............................................ 23  
Logical Inhibit ...................................................................... 23  
Power-Up Write Inhibit ......................................................... 23  
Flash Command Definitions . . . . . . . . . . . . . . . . 27  
Reading Array Data ................................................................ 27  
Reset Command ..................................................................... 27  
Autoselect Command Sequence ............................................ 27  
Enter SecSi™ Sector/Exit SecSi Sector  
Command Sequence .............................................................. 27  
Byte/Word Program Command Sequence ............................. 28  
Unlock Bypass Command Sequence .................................. 28  
Figure 4. Program Operation .......................................................... 29  
Chip Erase Command Sequence ........................................... 29  
Sector Erase Command Sequence ........................................ 29  
Erase Suspend/Erase Resume Commands ........................... 30  
Figure 5. Erase Operation............................................................... 30  
Flash Write Operation Status . . . . . . . . . . . . . . . . 33  
DQ7: Data# Polling ................................................................. 33  
UB#s and LB#s Control.................................................................. 59  
Flash Erase And Programming Performance . . 60  
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 60  
Package Pin Capacitance. . . . . . . . . . . . . . . . . . . 60  
March 12, 2004  
Am45DL3208G  
3

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