是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 12 X 11 MM, 0.80 MM PITCH, FBGA-63 |
针数: | 63 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.63 | 最长访问时间: | 55 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM/TOP |
JESD-30 代码: | R-PBGA-B63 | JESD-609代码: | e1 |
长度: | 12 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 63 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 类型: | NOR TYPE |
宽度: | 11 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AM29DL640H55WHI | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H55WHI | SPANSION | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H55WHIN | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H60EE | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H60EEN | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H60EI | SPANSION | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |