是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 最长访问时间: | 70 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM/TOP |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PBGA-B63 |
JESD-609代码: | e0 | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 3 | 部门数/规模: | 16,126 |
端子数量: | 63 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA63,8X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 8K,64K |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.045 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
AM29DL640H70EEN | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H70EEN | SPANSION | Flash, 4MX16, 70ns, PDSO48 |
获取价格 |
|
AM29DL640H70EI | SPANSION | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H70EI | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H70EIN | AMD | 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Me |
获取价格 |
|
AM29DL640H70EK | SPANSION | Flash, 4MX16, 70ns, MO-142DD, TSOP-48 |
获取价格 |