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AM29DL162DB90PCF PDF预览

AM29DL162DB90PCF

更新时间: 2024-01-23 15:41:00
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
57页 1258K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL162DB90PCF 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

AM29DL162DB90PCF 数据手册

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Am29DL16xD  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory  
DISTINCTIVE CHARACTERISTICS  
ARCHITECTURAL ADVANTAGES  
— 10 mA active read current at 5 MHz  
— 200 nA in standby or automatic sleep mode  
Simultaneous Read/Write operations  
— Data can be continuously read from one bank while  
executing erase/program functions in other bank  
Minimum 1 million write cycles guaranteed per sector  
20 Year data retention at 125°C  
— Zero latency between read and write operations  
— Reliable operation for the life of the system  
Multiple bank architectures  
SOFTWARE FEATURES  
— Four devices available with different bank sizes (refer  
to Table 2)  
Data Management Software (DMS)  
— AMD-supplied software manages data programming  
and erasing, enabling EEPROM emulation  
SecSi(Secured Silicon) Sector  
— Current version of device has 64 Kbytes; future  
versions will have 256 bytes  
— Eases sector erase limitations  
Supports Common Flash Memory Interface (CFI)  
Factory locked and identifiable: 16 bytes available for  
secure, random factory Electronic Serial Number;  
verifiable as factory locked through autoselect  
function. ExpressFlash option allows entire sector to  
be available for factory-secured data  
Erase Suspend/Erase Resume  
— Suspends erase operations to allow programming in  
same bank  
Data# Polling and Toggle Bits  
— Provides a software method of detecting the status of  
program or erase cycles  
Customer lockable: Can be read, programmed, or  
erased just like other sectors. Once locked, data  
cannot be changed  
Unlock Bypass Program command  
— Reduces overall programming time when issuing  
multiple program command sequences  
Zero Power Operation  
— Sophisticated power management circuits reduce  
power consumed during inactive periods to nearly  
zero  
HARDWARE FEATURES  
Package options  
Any combination of sectors can be erased  
— 48-ball Very Thin Profile Fine-pitch BGA  
— 48-ball Fine-pitch BGA  
— 64-ball Fortified BGA  
— 48-pin TSOP  
Ready/Busy# output (RY/BY#)  
— Hardware method for detecting program or erase  
cycle completion  
Hardware reset pin (RESET#)  
Top or bottom boot block  
— Hardware method of resetting the internal state  
machine to reading array data  
Manufactured on 0.23 µm process technology  
— Compatible with Am29DL16xC devices  
Compatible with JEDEC standards  
WP#/ACC input pin  
— Write protect (WP#) function allows protection of two  
outermost boot sectors, regardless of sector protect status  
— Pinout and software compatible with  
single-power-supply flash standard  
— Acceleration (ACC) function accelerates program  
timing  
Sector protection  
PERFORMANCE CHARACTERISTICS  
— Hardware method of locking a sector, either  
in-system or using programming equipment, to  
prevent any program or erase operation within that  
sector  
High performance  
— Access time as fast 70 ns  
— Program time: 7 µs/word typical utilizing Accelerate function  
Ultra low power consumption (typical values)  
Temporary Sector Unprotect allows changing data in  
protected sectors in-system  
— 2 mA active read current at 1 MHz  
Publication# 21533 Rev: E Amendment/+4  
Issue Date: May 26, 2004  
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Refer to AMD’s Website (www.amd.com) for the latest information.  

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