Datasheet > AM28F020A-70JIB

AM28F020A-70JIB

更新时间： 2024-01-12 09:06:10

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	444K
描述
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM28F020A-70JIB 数据手册

FINAL

Am28F020A

2 Megabit (256 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

■

Latch-up protected to 100 mA from

–1 V to V_CC+1 V

DISTINCTIVE CHARACTERISTICS

■

High performance

Embedded Erase Electrical Bulk Chip Erase

— Access times as fast as 70 ns

CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

— Five seconds typical chip erase, including

pre-programming

■

Embedded Program

— 14 µs typical byte program, including time-out

— 4 seconds typical chip program

■

Compatible with JEDEC-standard byte-wide

32-pin EPROM pinouts

Command register architecture for

microprocessor/microcontroller compatible

write interface

— 32-pin PDIP

— 32-pin PLCC

■

On-chip address and data latches

— 32-pin TSOP

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■

100,000 write/erase cycles minimum

Write and erase voltage 12.0 V 5%

■

Embedded algorithms for completely self-timed

write/erase operations

devices within this family that offer Embedded Algo-

rithms use the same command set. This offers

designers the flexibility to retain the same device foot-

print and command set, at any density between

256 Kbits and 2 Mbits.

GENERAL DESCRIPTION

The Am28F020A is a 2 Megabit Flash memory orga-

nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

Am28F020A is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed and

erased in-system or in standard EPROM programmers.

The Am28F020A is erased when shipped from

the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 100,000 erase and program cycles.

The AMD cell is designed to optimize the erase and

programming mechanisms. In addition, the combina-

tion of advanced tunnel oxide processing and low

internal electric fields for erase and programming oper-

ations produces reliable cycling. The Am28F020A uses

a 12.0±5% V_PPsupply input to perform the erase and

programming functions.

The standard Am28F020A offers access times of as

fast as 70 ns, allowing high speed microprocessors to

operate without wait states. To eliminate bus conten-

tion, the device has separate chip enable (CE ) and

output enable (OE ) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 mA on

address and data pins from –1 V to V_CC+1 V.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F020A uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

AMD’s Flash technology combines years of EPROM

and EEPROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The

Am28F020A electrically erases all bits simultaneously

using Fowler-Nordheim tunneling. The bytes are

programmed one byte at a time using the EPROM

programming mechanism of hot electron injection.

The Am28F020A is compatible with the AMD

Am28F256A, Am28F512A, and Am28F010A Flash

memories. All devices in the Am28Fxxx family follow

the JEDEC 32-pin pinout standard. In addition, all

Publication# 17502 Rev: D Amendment/+1

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM28F020A-70JIB相关器件

型号	品牌	获取价格	描述	数据表
AM28F020A-70PC	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-70PCB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-70PE	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-70PEB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-70PI	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-70PIB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-90DC	ETC	获取价格	x8 Flash EEPROM
AM28F020A-90EC	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-90ECB	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-90EE	AMD	获取价格	2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

与AM28F020A-70JIB相关文章

一文带你了解DS28E40主要特征、安全特性、应用场景
2024-07-30

29
RT9172资料手册解读：关节特性、引脚信息、参数说明
2024-07-30

29
一文带你了解SM8760CA资料：主要参数特征
2024-07-30

30
解读MAX3238ECPW：一款多通道RS-232线驱动/接收器
2024-07-30

37

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F020A-70JIB

AM28F020A-70JIB 数据手册

与AM28F020A-70JIB相关器件

与AM28F020A-70JIB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F020A-70JIB

AM28F020A-70JIB 数据手册

与AM28F020A-70JIB相关器件

与AM28F020A-70JIB相关文章

您还可以找

您在本页遇到什么问题？