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AM28F020A-150EC

更新时间： 2024-01-01 12:33:48
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
35页 444K
描述
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

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中文翻译

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AM28F020A-150EC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：PLASTIC, DIP-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.91最长访问时间：150 ns
其他特性：100K WRITE/ERASE CYCLES MIN命令用户界面：YES
数据轮询：YESJESD-30 代码：R-PDIP-T32
JESD-609代码：e0长度：42.037 mm
内存密度：2097152 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP32,.6封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
编程电压：12 V认证状态：Not Qualified
座面最大高度：5.715 mm最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NOR TYPE宽度：15.24 mm

AM28F020A-150EC 数据手册

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FINAL  
Am28F020A  
2 Megabit (256 K x 8-Bit)  
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms  
■
■
Latch-up protected to 100 mA from  
–1 V to VCC +1 V  
DISTINCTIVE CHARACTERISTICS  
■
High performance  
Embedded Erase Electrical Bulk Chip Erase  
— Access times as fast as 70 ns  
CMOS low power consumption  
— 30 mA maximum active current  
— 100 µA maximum standby current  
— No data retention power consumption  
— Five seconds typical chip erase, including  
pre-programming  
■
■
■
Embedded Program  
— 14 µs typical byte program, including time-out  
— 4 seconds typical chip program  
■
Compatible with JEDEC-standard byte-wide  
32-pin EPROM pinouts  
Command register architecture for  
microprocessor/microcontroller compatible  
write interface  
— 32-pin PDIP  
— 32-pin PLCC  
■
■
On-chip address and data latches  
— 32-pin TSOP  
Advanced CMOS flash memory technology  
— Low cost single transistor memory cell  
■
■
100,000 write/erase cycles minimum  
±
Write and erase voltage 12.0 V 5%  
■
Embedded algorithms for completely self-timed  
write/erase operations  
devices within this family that offer Embedded Algo-  
rithms use the same command set. This offers  
designers the flexibility to retain the same device foot-  
print and command set, at any density between  
256 Kbits and 2 Mbits.  
GENERAL DESCRIPTION  
The Am28F020A is a 2 Megabit Flash memory orga-  
nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-  
ories offer the most cost-effective and reliable read/  
write non-volatile random access memory. The  
Am28F020A is packaged in 32-pin PDIP, PLCC, and  
TSOP versions. It is designed to be reprogrammed and  
erased in-system or in standard EPROM programmers.  
The Am28F020A is erased when shipped from  
the factory.  
AMD’s Flash technology reliably stores memory con-  
tents even after 100,000 erase and program cycles.  
The AMD cell is designed to optimize the erase and  
programming mechanisms. In addition, the combina-  
tion of advanced tunnel oxide processing and low  
internal electric fields for erase and programming oper-  
ations produces reliable cycling. The Am28F020A uses  
a 12.0±5% VPP supply input to perform the erase and  
programming functions.  
The standard Am28F020A offers access times of as  
fast as 70 ns, allowing high speed microprocessors to  
operate without wait states. To eliminate bus conten-  
#
tion, the device has separate chip enable (CE ) and  
#
output enable (OE ) controls.  
The highest degree of latch-up protection is achieved  
with AMD’s proprietary non-epi process. Latch-up pro-  
tection is provided for stresses up to 100 mA on  
address and data pins from –1 V to VCC +1 V.  
AMD’s Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
Am28F020A uses a command register to manage this  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining  
maximum EPROM compatibility.  
AMD’s Flash technology combines years of EPROM  
and EEPROM experience to produce the highest levels  
of quality, reliability, and cost effectiveness. The  
Am28F020A electrically erases all bits simultaneously  
using Fowler-Nordheim tunneling. The bytes are  
programmed one byte at a time using the EPROM  
programming mechanism of hot electron injection.  
The Am28F020A is compatible with the AMD  
Am28F256A, Am28F512A, and Am28F010A Flash  
memories. All devices in the Am28Fxxx family follow  
the JEDEC 32-pin pinout standard. In addition, all  
Publication# 17502 Rev: D Amendment/+1  
Issue Date: January 1998  
1234567...35

中文翻译

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AM28F020A-150EC 替代型号

型号 品牌 替代类型 描述 数据表
M28F201-150N6TR STMICROELECTRONICS

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AM28F020A-150EE AMD

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AM28F020A-150EI AMD

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AM28F020A-150EIB AMD

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AM28F020A-150FC AMD

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AM28F020A-150FCB AMD

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AM28F020A-150FE AMD

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AM28F020A-150FEB AMD

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 		2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F020A-150FI AMD

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 		2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

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