Datasheet > AIGB30N65H5

AIGB30N65H5

更新时间： 2023-12-06 20:13:21

品牌	Logo	应用领域
英飞凌 - INFINEON		功率因数校正
页数	文件大小	规格书
14页	1461K
描述
Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP? 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

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AIGB30N65H5 数据手册

AIGB30N65H5

Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration

MaximumꢀRatings

Parameter

Symbol

Value

Unit

Collector-emitterꢀvoltage,ꢀT_vjꢀ≥ꢀ25°C

V_CE

650

DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀT_vjmax

T_cꢀ=ꢀ25°C

T_cꢀ=ꢀ100°C

I_C

55.0

35.0

Pulsedꢀcollectorꢀcurrent,ꢀt_pꢀlimitedꢀbyꢀT_vjmax

I_Cpuls

90.0

Turn off safe operating area

V_CEꢀ≤ꢀ650V,ꢀT_vjꢀ≤ꢀ175°C,ꢀt_pꢀ=ꢀ1µs¹⁾

Gate-emitter voltage

TransientꢀGate-emitterꢀvoltageꢀ(t_pꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)

±20

±30

V_GE

P_tot

PowerꢀdissipationꢀT_cꢀ=ꢀ25°C

PowerꢀdissipationꢀT_cꢀ=ꢀ100°C

188.0

93.0

Operating junction temperature

Storage temperature

T_vj

-40...+175

-55...+150

°C

T_stg

Soldering temperature,

reflow soldering (MSL1 according to JEDEC J-STA-020)

°C

260

ThermalꢀResistance

Value

min. typ. max.

Parameter

Symbol Conditions

Unit

R_thꢀCharacteristics

IGBT thermal resistance,

junction - case

R_th(j-c)

R_th(j-a)

0.80 K/W

65 K/W

Thermal resistance, min. footprint

junction - ambient

Thermal resistance, 6cm² Cu on

PCB

R_th(j-a)

40 K/W

junction - ambient

ElectricalꢀCharacteristic,ꢀatꢀT_vjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Value

Parameter

Symbol Conditions

Unit

min. typ. max.

StaticꢀCharacteristic

Collector-emitter breakdown voltage V_(BR)CESV_GEꢀ=ꢀ0V,ꢀI_Cꢀ=ꢀ0.20mA

V_GEꢀ=ꢀ15.0V,ꢀI_Cꢀ=ꢀ30.0A

T_vjꢀ=ꢀ25°C

Collector-emitter saturation voltage V_CEsat

T_vjꢀ=ꢀ125°C

650

1.65 2.10

1.85

1.95

T_vjꢀ=ꢀ175°C

Gate-emitter threshold voltage

V_GE(th)

I_Cꢀ=ꢀ0.30mA,ꢀV_CEꢀ=ꢀV_GE

3.2

4.0

4.8

V_CEꢀ=ꢀ650V,ꢀV_GEꢀ=ꢀ0V

T_vjꢀ=ꢀ25°C

T_vjꢀ=ꢀ175°C

Zero gate voltage collector current I_CES

µA

1000

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CEꢀ=ꢀ0V,ꢀV_GEꢀ=ꢀ20V

V_CEꢀ=ꢀ20V,ꢀI_Cꢀ=ꢀ30.0A

100

30.0

¹⁾Defined by design. Not subject to production test.

Datasheet

Vꢀ2.1

2019-10-18

1 234 5 6 7...14

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