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AH420

更新时间： 2024-01-10 16:59:28
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TRIQUINT 放大器
页数 文件大小 规格书
8页 558K
描述
4W High Linearity InGaP HBT Amplifier

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中文翻译

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AH420 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HVSON,Reach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：5.75
JESD-30 代码：R-PDSO-N12长度：5 mm
功能数量：1端子数量：12
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1 mm标称供电电压：5 V
表面贴装：YES电信集成电路类型：BASEBAND CIRCUIT
端子形式：NO LEAD端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：4 mmBase Number Matches：1

AH420 数据手册

 浏览型号AH420的Datasheet PDF文件第2页浏览型号AH420的Datasheet PDF文件第3页浏览型号AH420的Datasheet PDF文件第4页浏览型号AH420的Datasheet PDF文件第5页浏览型号AH420的Datasheet PDF文件第6页浏览型号AH420的Datasheet PDF文件第7页 
AH420  
4W High Linearity InGaP HBT Amplifier  
Product Features  
Product Description  
Functional Diagram  
The AH420 is a high dynamic range amplifier in a low-cost  
surface mount package. The InGaP/GaAs HBT is able to  
achieve high performance with -49 dBc ACLR and +35.7  
dBm of compressed 1dB power, operating off of a single  
+5V supply. It is housed in a lead-free/green/RoHS-  
compliant 4x5mm DFN package. All devices are 100% RF  
and DC tested.  
• 400 – 2700 MHz  
• +35.7 dBm P1dB  
• -49 dBc ACLR @ 26 dBm  
• 14 dB Gain @ 2140 MHz  
• 800 mA Quiescent Current  
• +5 V Single Supply  
• MTTF > 100 Years  
Function  
RFIN  
RFOUT  
IREF  
Pin No.  
3,4,5,6  
7,8,9,10  
12  
The AH420 is targeted for use as a final stage amplifier in  
wireless infrastructure repeaters or as driver stages for high  
power amplifiers where high performance is required. In  
addition, the amplifier can be used for a wide variety of  
other applications within the 400 to 2700 MHz frequency  
band. By operating off of a single +5V rail, other higher  
voltage rails are not necessarily needed thus saving system  
costs. The amplifier also has the flexibility to operate at  
higher voltage levels to achieve higher compression if  
needed by the system.  
• Lead-free/green/RoHS-compliant  
12-pin 4x5mm DFN Package  
VBIAS  
NC  
1
2,11  
Applications  
• Final stage amplifiers for Repeaters  
• High Power Amplifiers  
• Mobile Infrastructure  
• LTE / WCDMA / EDGE / CDMA  
Specifications  
Typical Performance  
Parameter  
Operational Bandwidth  
Units Min Typ Max  
Parameter  
Frequency  
Channel Power  
Gain  
Input Return Loss  
Output Return Loss  
ACPR (2)  
Output P1dB  
Noise Figure  
Output IP3 (4)  
Quiescent Collector Current (3)  
Iref  
Units  
Typical  
MHz  
MHz  
dBm  
dB  
400  
2700  
MHz  
dBm  
dB  
dB  
dB  
dBc  
dBm  
dB  
dBm  
mA  
mA  
V
940  
+27  
16  
14  
6.4  
1960  
+27  
14.1  
19  
7
-48  
2140  
+26  
14  
12  
7.4  
-49  
Test Frequency  
Output Channel Power  
Gain  
Input Return Loss  
Output Return Loss  
ACPR (2)  
2140  
+26  
14  
13  
16  
dB  
12  
-46.5  
dB  
7.4  
+35.2 +35.6 +35.7  
dBc  
dBm  
dBm  
mA  
mA  
V
-49  
+35.7  
+50  
800  
20  
6.6  
+50  
5.3  
+49  
800  
20  
5.6  
+50  
Output P1dB  
Output IP3 (4)  
Quiescent Collector Current (3)  
Iref  
710  
900  
Vcc, Vbias  
Vcc, Vbias  
+5  
+5  
5. The amplifier has been tested for ruggedness to be capable of handling:  
10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C  
10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C  
10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C  
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.  
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW  
3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when  
the current setting resistor, R4 connected to the Iref pin, is at 82 Ω.  
4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz.  
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
Absolute Maximum Ratings  
Parameter  
Storage Temperature  
Vcc, Vbias  
Rating  
-65 to +150 °C  
+14 V  
Ordering Information  
Input P9dB  
170 mA  
7 W  
RF Input Power, CW, 50 Ω, T=25°C  
Reference Current, Iref  
Dissipated Power, Pmax  
Part No.  
Description  
4W High Linearity InGaP HBT Amplifier  
920-960 MHz Evaluation Board  
AH420-EG  
AH420-EPCB900  
AH420-EPCB1960  
AH420-EPCB2140  
Max Junction Temperature, TJ  
158 °C  
For 106 hours MTTF  
1930-1990 MHz Evaluation Board  
2110-2170 MHz Evaluation Board  
Thermal Resistance, ΘJC  
10.6 °C / W  
Operation of this device above any of these parameters may cause permanent damage.  
Standard T/R size = 500 pieces on a 7” reel.  
Specifications and information are subject to change without notice.  
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com  
Page 1 of 8 Aug 2009  
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