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AH110

更新时间: 2024-09-29 04:05:11
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WJCI 放大器
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5页 321K
描述
0.2 Watt, High Linearity InGaP HBT Amplifier

AH110 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMT, SOT-89, 3 PINReach Compliance Code:unknown
风险等级:5.75构造:COMPONENT
增益:20.5 dB最大输入功率 (CW):12 dBm
最大工作频率:2000 MHz最小工作频率:50 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND MEDIUM POWERBase Number Matches:1

AH110 数据手册

 浏览型号AH110的Datasheet PDF文件第2页浏览型号AH110的Datasheet PDF文件第3页浏览型号AH110的Datasheet PDF文件第4页浏览型号AH110的Datasheet PDF文件第5页 
The Communications Edge
TM  
AH110  
0.2 Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
GND  
The AH110 is a high dynamic range driver amplifier in a  
low-cost surface mount package. The InGaP/GaAs HBT is  
able to achieve performance over a broad range with +39  
dBm OIP3 and +23 dBm of compressed 1-dB power. It is  
housed in a lead-free/green/RoHS-compliant SOT-89 SMT  
package. All devices are 100% RF and DC tested.  
xꢀ 50 – 2000 MHz  
4
xꢀ +23 dBm P1dB  
xꢀ +39 dBm Output IP3  
xꢀ 20.5 dB Gain @ 900 MHz  
xꢀ 17.6 dB Gain @ 1900 MHz  
xꢀ Single Positive Supply (+8V)  
xꢀ Lead-free/Green/RoHS-  
compliant SOT-89 Package  
The product is targeted for use as a gain block/driver  
amplifier for various current and next generation wireless  
technologies such as GPRS, GSM and CDMA, where high  
linearity and medium power is required. In addition, the  
AH110 will work for numerous other applications within  
50 to 2000 MHz frequency range.  
1
2
3
RF IN  
GND  
RF OUT  
Function  
Pin No.  
Input / Base  
Output / Collector  
Ground  
1
3
2, 4  
Applications  
xꢀ Mobile Infrastructure  
xꢀ Defense/Homeland Security  
Specifications (1)  
Typical Performance (5)  
Parameters  
Operational Bandwidth  
Test Frequency  
Gain  
Output P1dB  
Output OIP3  
Test Frequency  
Gain  
Units Min Typ Max  
Parameters  
Frequency  
S21 – Gain  
Units  
MHz  
dB  
dB  
Typical  
MHz  
MHz  
dB  
50  
2000  
900  
20.5  
-20  
1900  
17.6  
-17  
900  
20.5  
+23  
+39  
1900  
17.6  
+23  
+40  
S11 – Input R.L.  
S22 – Output R.L.  
Output P1dB  
dB  
-9.5  
+22.8  
+39  
+17  
5
-7.4  
+23  
+38  
+16  
5.2  
dBm  
dBm  
MHz  
dB  
dBm  
dBm  
dBm  
dB  
Output IP3 (6)  
IS-95A Channel Power (7)  
Noise Figure  
17  
Output P1dB  
dBm  
dBm  
Output IP3 (2)  
+38  
Supply Bias  
+8 V @ 100 mA  
IS-95A Channel Power  
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc  
100 mA, +25 C, Rbias = 30  
6. The recommended configuration with the 1.5pF output shunt capacitor placed at 39  
3 will yield 2 dB lower OIP3 than the maximum achievable OIP3, but will have improved S22 and  
gain flatness performance. Refer to note 2 for more information.  
=
dBm  
+16  
@ -45 dBc ACPR, 1900 MHz  
.
Noise Figure  
dB  
mA  
V
5.2  
100  
5
Operating Current Range (3)  
Device Voltage (4)  
85  
135  
7. This is measured with an IS-95 signal at (9 ch. Fwd) at -45dBc ACPR.  
1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with  
Rbias = 30  
.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. OIP3 is  
tested using a tuned fixture for optimal OIP3. Specifically, the 1.5pF output shunt capacitor is  
placed at 44  
The application circuit is tuned for optimum ACPR performance.  
OIP3 performance shown elsewhere in this datasheet corresponds to the 1.5pF capacitor placed at  
39  
P3, but will have  
improved S22 and gain flatness performance.  
3. This corresponds to the quiescent current or operating current under small-signal conditions.  
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms  
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead  
to thermal damage to the device.  
Absolute Maximum Rating  
Parameter  
Rating  
-40 to +85 qC  
-55 to +150 qC  
+15 dBm  
+6 V  
Ordering Information  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
Part No.  
Description  
InGaP HBT Gain Block  
AH110-89G  
(lead-free/green/RoHS-compliant SOT-89 package)  
Device Current  
Junction Temperature  
150 mA  
+250 qC  
AH110-89PCB900  
AH110-89PCB1900  
900 MHz Evaluation Board  
1900 MHz Evaluation Board  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Web site: www.wj.com Page 1 of 5 June 2006  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com  

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