The Communications Edge
TM
AH110
0.2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
GND
The AH110 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve performance over a broad range with +39
dBm OIP3 and +23 dBm of compressed 1-dB power. It is
housed in a lead-free/green/RoHS-compliant SOT-89 SMT
package. All devices are 100% RF and DC tested.
xꢀ 50 – 2000 MHz
4
xꢀ +23 dBm P1dB
xꢀ +39 dBm Output IP3
xꢀ 20.5 dB Gain @ 900 MHz
xꢀ 17.6 dB Gain @ 1900 MHz
xꢀ Single Positive Supply (+8V)
xꢀ Lead-free/Green/RoHS-
compliant SOT-89 Package
The product is targeted for use as a gain block/driver
amplifier for various current and next generation wireless
technologies such as GPRS, GSM and CDMA, where high
linearity and medium power is required. In addition, the
AH110 will work for numerous other applications within
50 to 2000 MHz frequency range.
1
2
3
RF IN
GND
RF OUT
Function
Pin No.
Input / Base
Output / Collector
Ground
1
3
2, 4
Applications
xꢀ Mobile Infrastructure
xꢀ Defense/Homeland Security
Specifications (1)
Typical Performance (5)
Parameters
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output OIP3
Test Frequency
Gain
Units Min Typ Max
Parameters
Frequency
S21 – Gain
Units
MHz
dB
dB
Typical
MHz
MHz
dB
50
2000
900
20.5
-20
1900
17.6
-17
900
20.5
+23
+39
1900
17.6
+23
+40
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
dB
-9.5
+22.8
+39
+17
5
-7.4
+23
+38
+16
5.2
dBm
dBm
MHz
dB
dBm
dBm
dBm
dB
Output IP3 (6)
IS-95A Channel Power (7)
Noise Figure
17
Output P1dB
dBm
dBm
Output IP3 (2)
+38
Supply Bias
+8 V @ 100 mA
IS-95A Channel Power
5. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +8 V, Icc
100 mA, +25 C, Rbias = 30
6. The recommended configuration with the 1.5pF output shunt capacitor placed at 39
3 will yield 2 dB lower OIP3 than the maximum achievable OIP3, but will have improved S22 and
gain flatness performance. Refer to note 2 for more information.
=
dBm
+16
@ -45 dBc ACPR, 1900 MHz
.
Noise Figure
dB
mA
V
5.2
100
5
Operating Current Range (3)
Device Voltage (4)
85
135
7. This is measured with an IS-95 signal at (9 ch. Fwd) at -45dBc ACPR.
1. Test conditions unless otherwise noted: 25 C, Vsupply = +8V, in tuned application circuit with
Rbias = 30
.
2. 3OIP measured with two tones at an output power of +9 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. OIP3 is
tested using a tuned fixture for optimal OIP3. Specifically, the 1.5pF output shunt capacitor is
placed at 44
The application circuit is tuned for optimum ACPR performance.
OIP3 performance shown elsewhere in this datasheet corresponds to the 1.5pF capacitor placed at
39
P3, but will have
improved S22 and gain flatness performance.
3. This corresponds to the quiescent current or operating current under small-signal conditions.
4. This device requires a minimum 7 V power supply through a dropping resistor. 8 V and 30 ohms
are recommended for proper operation. Operation of the device directly to a 5 V supply could lead
to thermal damage to the device.
Absolute Maximum Rating
Parameter
Rating
-40 to +85 qC
-55 to +150 qC
+15 dBm
+6 V
Ordering Information
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Part No.
Description
InGaP HBT Gain Block
AH110-89G
(lead-free/green/RoHS-compliant SOT-89 package)
Device Current
Junction Temperature
150 mA
+250 qC
AH110-89PCB900
AH110-89PCB1900
900 MHz Evaluation Board
1900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Web site: www.wj.com Page 1 of 5 June 2006
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com