FAST RECOVERY DIODE
INSULATED MODULE
*Full ermetic packaging
*Industrial compatible packaging
*Insulation using Aln substrate
*6KVrms insulation voltage available on request
*Contact screws avaliable on request
AFF150K
Repetitive voltage up to
3300 V
150 A
2,5 kA
Mean on-state current
Surge current
FINAL SPECIFICATION
apr 17 - ISSUE : 1
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
125
125
125
3300
3400
50
V
V
mA
CONDUCTING
I F (AV)
Mean on-state current
180° sin, 50Hz, Tc=55°C
150,1
A
I F (AV)
I FSM
I² t
Mean on-state current
Surge on-state current
I² t
180° sin. 50Hz, Tc=70°C
sine wave, 10 ms
129,1
2,5
A
kA
125
without reverse voltage
31 x1E3
0
A²s
V
V F
On-state voltage
On-state current =
100 A
125
125
V F(TO)
r F
Threshold voltage
1,70
V
On-state slope resistance
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
125 7,400
mohm
µC
A
Q rr
I rr
I F =
200 A
125
125
125
175
di/dt=
VR =
100 A/µs
50 V
155
2,2
t rr
µs
MOUNTING
R th(j-c)
Thermal impedance
Junction to case, per element
Case to heatsink, per element
105
°C/kW
R th(c-h)
T j
Thermal impedance
20
-30 / 125
4500
°C/kW
°C
Operating junction temperature
RMS insulation voltage
Mounting tourque
V ins
T
50Hz, circuit to base,all terminal shorted
25
V
Case to heatsink
4 to 6
12 to 18
1500
Nm
Nm
g
Busbars to terminals
Mass
ORDERING INFORMATION : AFF150K S 33
(*) 6000V available on request.
Add HVI to the desired code in
VRRM/100
standard specification
phase of order, i.e. AFF230HVIS26