5秒后页面跳转
AFE88101RRUR PDF预览

AFE88101RRUR

更新时间: 2023-09-03 20:33:50
品牌 Logo 应用领域
德州仪器 - TI 传感器
页数 文件大小 规格书
87页 4365K
描述
适用于传感器和现场变送器应用的单通道、低功耗、16 位 DAC | RRU | 24 | -55 to 125

AFE88101RRUR 数据手册

 浏览型号AFE88101RRUR的Datasheet PDF文件第2页浏览型号AFE88101RRUR的Datasheet PDF文件第3页浏览型号AFE88101RRUR的Datasheet PDF文件第4页浏览型号AFE88101RRUR的Datasheet PDF文件第6页浏览型号AFE88101RRUR的Datasheet PDF文件第7页浏览型号AFE88101RRUR的Datasheet PDF文件第8页 
AFE78101, AFE88101  
ZHCSP80 DECEMBER 2022  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
10  
55  
65  
MAX  
5.5  
UNIT  
V
PVDD, IOVDD to GND  
VDD to GND  
1.98  
V
AIN0, POL_SEL/AIN1, VOUT to GND  
PVDD + 0.3  
IOVDD + 0.3  
VDD + 0.3  
0.3  
V
Voltage  
Digital Input/Output to GND  
V
VREFIO to GND  
V
REF_GND to GND  
V
Input current  
Current into any pin  
10  
mA  
TJ  
Junction temperature  
Storage temperature  
150  
°C  
Tstg  
150  
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply  
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If  
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully  
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.  
6.2 ESD Ratings  
VALUE  
±2000  
±500  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)  
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2)  
Electrostatic  
discharge  
V(ESD)  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
2.7  
NOM  
MAX  
5.5  
UNIT  
PVDD > 2.7 V, VDD internally generated  
PVDD = VDD  
V
V
V
V
V
PVDD to GND  
1.71  
1.71  
1.71  
1.2  
1.89  
1.89  
5.5  
VDD to GND  
IOVDD to GND  
VREFIO to GND  
External VREF  
Specified  
1.25  
1.3  
125  
125  
40  
55  
TA  
Ambient temperature  
°C  
Operating  
6.4 Thermal Information  
AFEx8101  
THERMAL METRIC(1)  
RRU (UQFN)  
24 PINS  
103.1  
84.4  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJC(bottom)  
RθJB  
Junction-to-case (top) thermal resistance  
Junction-to-case (bottom) thermal resistance  
Junction-to-board thermal resistance  
N/A  
69.5  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
0.4  
ΨJT  
68.4  
ΨJB  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
Copyright © 2023 Texas Instruments Incorporated  
Submit Document Feedback  
5
Product Folder Links: AFE78101 AFE88101  
 
 
 
 
 
 
 
 
 
 
 

与AFE88101RRUR相关器件

型号 品牌 描述 获取价格 数据表
AFE881H1 TI 具有 DAC、ADC 和 HART® 调制解调器、适用于传感器发送器的 16 位低功耗模拟

获取价格

AFE881H1RRUR TI 具有 DAC、ADC 和 HART® 调制解调器、适用于传感器发送器的 16 位低功耗模拟

获取价格

AFE88201 TI 用于传感器变送器的单通道 16 位电压模拟前端 (AFE)

获取价格

AFE88201RRUR TI 用于传感器变送器的单通道 16 位电压模拟前端 (AFE) | RRU | 24 | -5

获取价格

AFE88201RRUT TI 用于传感器变送器的单通道 16 位电压模拟前端 (AFE) | RRU | 24 | -5

获取价格

AFE882H1 TI 适用于 PLC 和传感器变送器应用且具有 HART®、16 位 DAC 和 12

获取价格