AFE8221-Q1
SBAS434–DECEMBER 2008........................................................................................................................................................................................... www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
AVDD
–0.5 V to 3.6 V
–0.5 V to 3.6 V
Supply voltage range
DVDD
IOVDD
–0.5 V to 3.6 V
AGND to DGND
AVDD to DVDD
–0.3 V to 0.5 V
Voltage between
–3.3 V to 3.3 V
VIN
Digital input voltages(2)
–0.3 V to (DVDD + 0.3 V)
–0.3 V to (DVDD + 0.3 V)
–40°C to 85°C
VOUT
TA
Digital data output voltage
Operating free-air temperature range
Storage temperature range
Tstg
–55°C to 125°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Measured with respect to DGND.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
3.14
1.6
TYP
3.3
MAX UNIT
AVDD
DVDD
IOVDD
Analog supply voltage
Digital supply voltage
3.6
2.0
3.6
V
V
1.8
Output driver supply voltage
Input common-mode voltage
Differential input voltage
1.6
V
VCM
2
V
VPP
V
VIH
VIL
TA
High-level input voltage, digital inputs
Low-level input voltage, digital inputs
Operating free-air temperature
0.7 × IOVDD
–40
0.25 × IOVDD
+85
V
°C
2
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