Isolated, Precision Gate Drivers
with 2 A Output
Data Sheet
ADuM4120/ADuM4120-1
FEATURES
GENERAL DESCRIPTION
2.3 A peak output current (<2 Ω RDSON_x
2.5 V to 6.5 V VDD1 input
4.5V to 35 V VDD2 output
UVLO at 2.3 V VDD1
Multiple UVLO options on VDD2
Grade A—4.4 V (typical) positive going threshold
Grade B—7.3 V (typical) positive going threshold
Grade C—11.3 V (typical) positive going threshold
Precise timing characteristics
79 ns maximum isolator and driver propagation delay
falling edge (ADuM4120)
)
The ADuM4120/ADuM4120-11 are 2 A isolated, single-channel
drivers that employ Analog Devices, Inc., iCoupler® technology
to provide precision isolation. The ADuM4120/ADuM4120-1
provide 5 kV rms isolation in the 6-lead wide body SOIC package
with increased creepage. Combining high speed CMOS and
monolithic transformer technology, these isolation components
provide outstanding performance characteristics, such as the
combination of pulse transformers and gate drivers.
The ADuM4120/ADuM4120-1 operate with input supplies
ranging from 2.5 V to 6.5 V, providing compatibility with lower
voltage systems. In comparison to gate drivers employing
high voltage level translation methodologies, the ADuM4120/
ADuM4120-1 offer the benefit of true, galvanic isolation between
the input and the output.
CMOS input logic levels
High common-mode transient immunity: 150 kV/μs
High junction temperature operation: 125°C
Default low output
Options exist for models with and without an input glitch filter.
The glitch filter helps reduce the chance of noise on the input pin
triggering an output.
Safety and regulatory approvals (pending)
UL recognition per UL 1577
5 kV rms for 1 minute SOIC long package
CSA Component Acceptance Notice 5A
VDE certificate of conformity (pending)
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
As a result, the ADuM4120/ADuM4120-1 provide reliable
control over the switching characteristics of insulated gate
bipolar transistor (IGBT)/metal-oxide semiconductor field effect
transistor (MOSFET) configurations over a wide range of
switching voltages.
V
IORM = 849 V peak
8 mm creepage
Wide body, 6-lead SOIC with increased creepage
APPLICATIONS
Switching power supplies
IGBT/MOSFET gate drivers
Industrial inverters
Gallium nitride (GaN)/silicon carbide (SiC) power devices
FUNCTIONAL BLOCK DIAGRAM
ADuM4120/
1
2
6
5
V
V
V
DD1
DD2
ADuM4120-1
DECODE
AND
LOGIC
ENCODE
V
IN
OUT
UVLO
UVLO TSD
4
GND
3
GND
2
1
Figure 1.
1 Protected by U.S. Patents 5,952,849; 6,873,065; 7,075,239. Other patents pending.
Rev. 0 Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2017 Analog Devices, Inc. All rights reserved.
www.analog.com
5秒后页面跳转
AO3401场效应管参数、引脚图、应用原理图
BT131可控硅参数及引脚图、工作原理详解
74LS32芯片参数、引脚图及功能真值表
全球首块英伟达H200交付 黄仁勋“送货上门”
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
