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ADT75BRMZ-REEL7

更新时间： 2024-01-28 20:56:26
品牌 Logo 应用领域
亚德诺 - ADI 传感器温度传感器
页数 文件大小 规格书
24页 389K
描述
+-1∑C Accurate, 12-Bit Digital Temperature Sensor

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ADT75BRMZ-REEL7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ActiveReach Compliance Code：unknown
风险等级：5.83最大精度（摄氏度）：3 Cel
其他特性：ACCURACY FOR A GRADE主体宽度：3 mm
主体高度：0.85 mm主体长度或直径：3 mm
外壳：PLASTICJESD-609代码：e3
安装特点：SURFACE MOUNT位数：12
最大工作电流：0.001 mA最高工作温度：125 °C
最低工作温度：-55 °C输出接口类型：I2C INTERFACE
封装形状/形式：SQUARE传感器/换能器类型：TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL
最大供电电压：5.5 V最小供电电压：3 V
表面贴装：YES端子面层：MATTE TIN
端接类型：SOLDER

ADT75BRMZ-REEL7 数据手册

 浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第4页浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第5页浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第6页浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第8页浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第9页浏览型号ADT75BRMZ-REEL7的Datasheet PDF文件第10页 
CC  
 ꢁT75  
 -SOLUTECM XIMUMCR TINGSC  
Table 4.  
Stresses above those listed under Absolute Maꢀimum Ratings  
Parameter  
Rating  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Eꢀposure to absolute  
maꢀimum rating conditions for eꢀtended periods may affect  
device reliability.  
VDD to GND  
–0.3 V to +7 V  
SDA Input Voltage to GND  
SDA Output Voltage to GND  
SCL Input Voltage to GND  
OS/ALERT Output Voltage to GND  
Operating Temperature Range  
Storage Temperature Range  
Maximum Junction Temperature, TJMAX  
8-Lead MSOP (RM-8)  
–0.3 V to VDD + 0.3 V  
–0.3 V to VDD + 0.3 V  
–0.3 V to VDD + 0.3 V  
–0.3 V to VDD + 0.3 V  
–55°C to +150°C  
–65°C to +160°C  
150.7°C  
1.2  
1.0  
0.8  
0.6  
0.4  
2
Power Dissipation1,  
WMAX = (TJMAX − TA)/θJA  
Thermal Impedance3  
θJA, Junction-to-Ambient (Still Air)  
θJC, Junction-to-Case  
205.9°C/W  
43.74°C/W  
8-Lead SOIC (R-8)  
Power Dissipation1, 2  
Thermal Impedance3  
WMAX = (TJMAX − TA)/θJA  
0.2  
MAX PD = 3.4mW AT 150°C  
θJA, Junction-to-Ambient (Still Air)  
θJC, Junction-to-Case  
157°C/W  
56°C/W  
0
IR Reflow Soldering  
Peak Temperature  
TEMPERATURE (°C)  
220°C (0°C/5°C)  
Figure 3. MSOP Maximum Power Dissipation vs. Ambient Temperature  
Time at Peak Temperature  
Ramp-Up Rate  
Ramp-Down Rate  
Time 25°C to Peak Temperature  
IR Reflow Soldering (Pb-Free Package)  
Peak Temperature  
10 sec to 20 sec  
3°C/sec maximum  
–6°C/sec maximum  
6 minutes maximum  
260°C (+0°C)  
Time at Peak Temperature  
Ramp-Up Rate  
Ramp-Down Rate  
20 sec to 40 sec  
3°C/sec maximum  
–6°C/sec maximum  
8 minutes maximum  
Time 25°C to Peak Temperature  
1 Values relate to package being used on a standard 2-layer PCB. This gives a  
worst case θJA and θJC. Refer to Figure 3 for a plot of maximum power  
dissipation vs. ambient temperature (TA).  
2 TA = ambient temperature.  
3 Junction-to-case resistance is applicable to components featuring a  
preferential flow direction, for example, components mounted on a heat  
sink. Junction-to-ambient resistance is more useful for air-cooled, PCB-  
mounted components.  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on  
the human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-  
tion or loss of functionality.  
Rev. 0 | Page 7 of 24  
 
 
 
 
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