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SLAS400 − SEPTEMBER 2003
SPECIFICATIONS Continued
A
T
= −40°C to 85°C, +VA = 5 V, +VBD = 5 V or 3.3 V, V = 2.5 V, f
= 4 MHz (unless otherwise noted)
ref
sample
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INTERNAL REFERENCE OUTPUT
From 95% (+VA), with 1-µF storage
capacitor on REFOUT to AGND
Start-up time
120
2.53
msec
V
REF
Range
IOUT=0
2.47
2.5
V
µA
Source current
Line regulation
Drift
Static load
10
+VA = 4.75 V to 5.25 V
IOUT = 0
1
mV
25
PPM/C
DIGITAL INPUT/OUTPUT
Logic family
CMOS
V
V
V
V
I
I
I
I
= 5 µA
= 5 µA
+V
BD
−1
+V
BD
+ 0.3
0.8
V
V
V
V
IH
IH
−0.3
− 0.6
0
IL
IL
Logic level
= 2 TTL loads
= 2 TTL loads
+V
BD
+V
OH
OL
OH
OL
BD
0.4
Straight
Binary
Data format
POWER SUPPLY REQUIREMENTS
+VBD
Power supply voltage
+VA
2.7
3.3
5
5.25
5.25
22
V
V
4.75
Supply current, +VA, 4 MHz sample rate
Power dissipation, 4 MHz sample rate
NAP MODE
19
95
mA
mW
+VA = 5 V
110
Supply current, +VA
2
3
mA
(7)
Power-up time
60
nsec
POWER DOWN
Supply current, +VA
2
2.5
µA
(8)
Power down time
From simulation results
10
µsec
1-µF Storage capacitor on REFOUT to
AGND
Power up time
25
4
msec
Invalid conversions after power up or reset
TEMPERATURE RANGE
Numbers
Operating free-air
−40
85
°C
(1)
Ideal input span; does not include gain or offset error.
This is endpoint INL, not best fit.
LSB means least significant bit.
Measured relative to actual measured reference.
Calculated on the first nine harmonics of the input frequency.
Can vary 20%.
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Minimum acquisition time for first sampling after the end of nap state must be 60 nsec more than normal.
Time required to reach level of 2.5 µA.
4