ADP1882/ADP1883
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
OUTPUT DRIVER CHARACTERISTICS
High-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60)
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 61)
2
3.5
2
Ω
Ω
ns
ns
0.8
25
11
tR, DRVH
tF, DRVH
Fall Time2
Low-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
VDD = 5.0 V, CIN = 4.3 nF (see Figure 61)
1.7
0.75
18
3
2
Ω
Ω
ns
ns
tR, DRVL
tF, DRVL
Fall Time2
VDD = 5.0 V, CIN = 4.3 nF (see Figure 60)
16
Propagation Delays
DRVL Fall to DRVH Rise2
DRVH Fall to DRVL Rise2
SW Leakage Current
Integrated Rectifier
Channel Impedance
PRECISION ENABLE THRESHOLD
Logic High Level
tTPDH, DRVH
tTPDH, DRVL
ISW, LEAK
BST − SW = 4.4 V (see Figure 60)
BST − SW = 4.4 V (see Figure 61)
BST = 25 V, SW = 20 V, VDD = 5.5 V
22
24
ns
ns
μA
110
330
ISINK = 10 mA
22
Ω
VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V
VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V
235
285
35
mV
mV
Enable Hysteresis
COMP VOLTAGE
COMP Clamp Low Voltage
VCOMP(LOW)
From disable state, release COMP/EN pin to enable
device; 2.75 V ≤ VDD ≤ 5.5 V
0.47
V
COMP Clamp High Voltage
COMP Zero Current Threshold
THERMAL SHUTDOWN
VCOMP(HIGH)
VCOMP_ZCT
TTMSD
2.75 V ≤ VDD ≤ 5.5 V
2.75 V ≤ VDD ≤ 5.5 V
2.55
V
V
0.95
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Hiccup Current Limit Timing
Rising temperature
155
15
6
°C
°C
ms
1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 60 and Figure 61), CGATE = 4.3 nF, and the upper-side and lower-side
MOSFETs specified as Infineon BSC042N030MSG.
2 Not automatic test equipment (ATE) tested.
Rev. 0 | Page 4 of 40