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ADP1882ARMZ-0.3-R7 PDF预览

ADP1882ARMZ-0.3-R7

更新时间: 2024-01-11 19:44:06
品牌 Logo 应用领域
亚德诺 - ADI 控制器
页数 文件大小 规格书
40页 1910K
描述
Synchronous Current-Mode with Constant On-Time,PWM Buck Controller

ADP1882ARMZ-0.3-R7 数据手册

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ADP1882/ADP1883  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
OUTPUT DRIVER CHARACTERISTICS  
High-Side Driver  
Output Source Resistance  
Output Sink Resistance  
Rise Time2  
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)  
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)  
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60)  
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 61)  
2
3.5  
2
Ω
Ω
ns  
ns  
0.8  
25  
11  
tR, DRVH  
tF, DRVH  
Fall Time2  
Low-Side Driver  
Output Source Resistance  
Output Sink Resistance  
Rise Time2  
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)  
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)  
VDD = 5.0 V, CIN = 4.3 nF (see Figure 61)  
1.7  
0.75  
18  
3
2
Ω
Ω
ns  
ns  
tR, DRVL  
tF, DRVL  
Fall Time2  
VDD = 5.0 V, CIN = 4.3 nF (see Figure 60)  
16  
Propagation Delays  
DRVL Fall to DRVH Rise2  
DRVH Fall to DRVL Rise2  
SW Leakage Current  
Integrated Rectifier  
Channel Impedance  
PRECISION ENABLE THRESHOLD  
Logic High Level  
tTPDH, DRVH  
tTPDH, DRVL  
ISW, LEAK  
BST − SW = 4.4 V (see Figure 60)  
BST − SW = 4.4 V (see Figure 61)  
BST = 25 V, SW = 20 V, VDD = 5.5 V  
22  
24  
ns  
ns  
μA  
110  
330  
ISINK = 10 mA  
22  
Ω
VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V  
VIN = 2.75 V to 20 V, VDD = 2.75 V to 5.5 V  
235  
285  
35  
mV  
mV  
Enable Hysteresis  
COMP VOLTAGE  
COMP Clamp Low Voltage  
VCOMP(LOW)  
From disable state, release COMP/EN pin to enable  
device; 2.75 V ≤ VDD ≤ 5.5 V  
0.47  
V
COMP Clamp High Voltage  
COMP Zero Current Threshold  
THERMAL SHUTDOWN  
VCOMP(HIGH)  
VCOMP_ZCT  
TTMSD  
2.75 V ≤ VDD ≤ 5.5 V  
2.75 V ≤ VDD ≤ 5.5 V  
2.55  
V
V
0.95  
Thermal Shutdown Threshold  
Thermal Shutdown Hysteresis  
Hiccup Current Limit Timing  
Rising temperature  
155  
15  
6
°C  
°C  
ms  
1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 60 and Figure 61), CGATE = 4.3 nF, and the upper-side and lower-side  
MOSFETs specified as Infineon BSC042N030MSG.  
2 Not automatic test equipment (ATE) tested.  
Rev. 0 | Page 4 of 40  
 
 
 

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