ADP1870/ADP1871
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ADP1870ARMZ-0.6/
600
kHz
ADP1871ARMZ-0.6 (600 kHz)
On-Time
Minimum On-Time
Minimum Off-Time
VIN = 5 V, VOUT = 2 V, TJ = 25°C
VIN = 20 V, VOUT = 0.8 V
65% duty cycle (maximum)
500
540
82
340
1.0
580
110
400
ns
ns
ns
MHz
ADP1870ARMZ-1.0/
ADP1871ARMZ-1.0 (1.0 MHz)
On-Time
VIN = 5 V, VOUT = 2 V, TJ = 25°C
VIN = 20 V
45% duty cycle (maximum)
285
312
60
340
340
85
400
ns
ns
ns
Minimum On-Time
Minimum Off-Time
OUTPUT DRIVER CHARACTERISTICS
High-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
VBST − VSW = 4.4 V, CIN = 4.3 nF (see Figure 60)
VBST − VSW = 4.4 V, CIN = 4.3 nF (see Figure 61)
2.25
0.7
25
3
1
Ω
Ω
ns
ns
tr,DRVH
tf,DRVH
Fall Time2
11
Low-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
VREG = 5.0 V, CIN = 4.3 nF (see Figure 61)
1.6
0.7
18
2.2
1
Ω
Ω
ns
ns
tr,DRVL
tf,DRVL
Fall Time2
VREG = 5.0 V, CIN = 4.3 nF (see Figure 60)
16
Propagation Delays
DRVL Fall to DRVH Rise2
DRVH Fall to DRVL Rise2
SW Leakage Current
Integrated Rectifier
Channel Impedance
PRECISION ENABLE THRESHOLD
Logic High Level
ttpdhDRVH
ttpdhDRVL
ISWLEAK
VBST − VSW = 4.4 V (see Figure 60)
VBST − VSW = 4.4 V (see Figure 61)
VBST = 25 V, VSW = 20 V, VREG = 5 V
15.4
18
ns
ns
μA
110
330
ISINK = 10 mA
22
Ω
VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V
VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V
245
285
37
mV
mV
Enable Hysteresis
COMP VOLTAGE
COMP Clamp Low Voltage
VCOMP(low)
From disabled state, release COMP/EN pin to enable 0.47
device (2.75 V ≤ VREG ≤ 5.5 V)
V
COMP Clamp High Voltage
COMP Zero Current Threshold
THERMAL SHUTDOWN
VCOMP(high)
VCOMP_ZCT
TTMSD
(2.75 V ≤ VREG ≤ 5.5 V)
(2.75 V ≤ VREG ≤ 5.5 V)
2.55
V
V
1.07
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Hiccup Current Limit Timing
Rising temperature
155
15
6
°C
°C
ms
1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 60 and Figure 61), CGATE = 4.3 nF, and the upper- and lower-side
MOSFETs being Infineon BSC042N03MSG.
2 Not automatic test equipment (ATE) tested.
Rev. 0 | Page 4 of 44