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ADL5391ACPZ-WP PDF预览

ADL5391ACPZ-WP

更新时间: 2024-01-07 15:24:03
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
16页 430K
描述
DC to 2.0 GHz Multiplier

ADL5391ACPZ-WP 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN,针数:16
Reach Compliance Code:compliantECCN代码:5A991.B
HTS代码:8542.39.00.01风险等级:5.09
JESD-30 代码:S-XQCC-N16JESD-609代码:e3
长度:3 mm湿度敏感等级:3
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.9 mm标称供电电压:5 V
表面贴装:YES技术:BIPOLAR
电信集成电路类型:TELECOM CIRCUIT温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

ADL5391ACPZ-WP 数据手册

 浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第2页浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第3页浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第4页浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第6页浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第7页浏览型号ADL5391ACPZ-WP的Datasheet PDF文件第8页 
ADL5391  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
Parameter  
Rating  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Supply Voltage VPOS  
ENBL  
XPLS, XMNS, YPLS, YMNS, ZPLS, ZMNS  
GADJ  
Internal Power Dissipation  
θJA (With Pad Soldered to Board)  
Maximum Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Lead Temperature (Soldering 60 sec)  
5.5 V  
5.5 V  
VPOS  
VPOS  
800 mW  
73°C/W  
150°C  
−40°C to +85°C  
−65°C to +150°C  
300°C  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. 0 | Page 5 of 16  
 

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