Datasheet > ADG1236YCPZ-500RL7

ADG1236YCPZ-500RL7

更新时间： 2024-02-10 15:33:35

品牌	Logo	应用领域
亚德诺 - ADI		光电二极管输出元件
页数	文件大小	规格书
17页	394K
描述
Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch

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ADG1236YCPZ-500RL7 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	QFN
包装说明：	HVQCCN,	针数：	12
Reach Compliance Code：	unknown	风险等级：	5.39
模拟集成电路 - 其他类型：	SPDT	JESD-30 代码：	S-XQCC-N12
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	3	负电源电压最大值（Vsup）：	-16.5 V
负电源电压最小值（Vsup）：	-13.5 V	标称负供电电压 (Vsup)：	-15 V
信道数量：	1	功能数量：	2
端子数量：	12	标称断态隔离度：	80 dB
通态电阻匹配规范：	3.5 Ω	最大通态电阻 (Ron)：	190 Ω
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	UNSPECIFIED	封装代码：	HVQCCN
封装形状：	SQUARE	封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：	260	座面最大高度：	1 mm
最大供电电压 (Vsup)：	16.5 V	最小供电电压 (Vsup)：	13.5 V
标称供电电压 (Vsup)：	15 V	表面贴装：	YES
技术：	CMOS	温度等级：	AUTOMOTIVE
端子面层：	MATTE TIN	端子形式：	NO LEAD
端子节距：	0.5 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	40	宽度：	3 mm
Base Number Matches：	1

ADG1236YCPZ-500RL7 数据手册

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Low Capacitance, Low Charge Injection,

15 V/12 V iCMOS, Dual SPDT Switch

Data Sheet

ADG1236

FEATURES

FUNCTIONAL BLOCK DIAGRAM

1.3 pF off capacitance

3.5 pF on capacitance

ADG1236

S1A

1 pC charge injection

33 V supply range

S1B

120 Ω on resistance

Fully specified at +12 V, 15 V

No V_Lsupply required

IN1

IN2

3 V logic-compatible inputs

Rail-to-rail operation

S2A

16-lead TSSOP and 12-lead LFCSP packages

Typical power consumption: <0.03 µW

S2B

APPLICATIONS

SWITCHES SHOWN FOR A LOGIC 1 INPUT

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio/video signal routing

Communication systems

Figure 1.

GENERAL DESCRIPTION

Each switch conducts equally well in both directions when on

and has an input signal range that extends to the supplies. In the

off condition, signal levels up to the supplies are blocked. Both

switches exhibit break-before-make switching action for use in

multiplexer applications.

The ADG1236 is a monolithic CMOS device containing two

independently selectable SPDT switches. It is designed on an

iCMOS® process. iCMOS (industrial CMOS) is a modular

manufacturing process combining high voltage complementary

metal-oxide semiconductor (CMOS) and bipolar technologies.

It enables the development of a wide range of high performance

analog ICs capable of 33 V operation in a footprint that no

previous generation of high voltage devices has been able to

achieve. Unlike analog ICs using conventional CMOS processes,

iCMOS components can tolerate high supply voltages while

providing increased performance, dramatically lower power

consumption, and reduced package size.

PRODUCT HIGHLIGHTS

1. 1.3 pF off capacitance ( 15 V supply).

2. 1 pC charge injection.

3. 3 V logic-compatible digital inputs: V_IH= 2.0 V, V_IL= 0.8 V.

4. No V_Llogic power supply required.

5. Ultralow power dissipation: <0.03 µW.

6. 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages.

The ultralow capacitance and charge injection of the device

make it an ideal solution for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

Fast switching speed coupled with high signal bandwidth makes

the device suitable for video signal switching. iCMOS construction

ensures ultralow power dissipation, making the device ideally

suited for portable and battery-powered instruments.

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rightsof third parties that may result fromits use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks andregisteredtrademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Technical Support

www.analog.com

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与ADG1236YCPZ-500RL7相关器件

型号	品牌	获取价格	描述	数据表
ADG1236YCPZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, ±15 V/
ADG1236YRU	ADI	获取价格	2 pF Off Capacitance, 1 pC Charge Injection,
ADG1236YRUZ	ADI	获取价格	Low Capacitance, Low Charge Injection, ±15 V/
ADG1236YRUZ-REEL	ADI	获取价格	Low Capacitance, Low Charge Injection, ±15 V/
ADG1236YRUZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, ±15 V/
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ADG1308	ADI	获取价格	4- and 8-Channel +-15 V/+12 V Multiplexers
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ADG1308BRUZ	ADI	获取价格	4- and 8-Channel +-15 V/+12 V Multiplexers
ADG1308BRUZ-REEL7	ADI	获取价格	4- and 8-Channel +-15 V/+12 V Multiplexers

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