ADF4216/ADF4217/ADF4218
(VDD1 = VDD2 = 3 V ؎ 10%, 5 V ؎ 10%; VP1, VP2 = VDD , 5 V ؎ 10%; AGND = DGND = 0 V;
TA = TMIN to TMAX unless otherwise noted.)
TIMING CHARACTERISTICS
Limit at
T
MIN to TMAX
Parameter
(B Version)
Unit
Test Conditions/Comments
t1
t2
t3
t4
t5
t6
10
10
25
25
10
20
ns min
ns min
ns min
ns min
ns min
ns min
DATA to CLOCK Setup Time
DATA to CLOCK Hold Time
CLOCK High Duration
CLOCK Low Duration
CLOCK to LE Setup Time
LE Pulsewidth
NOTES
Guaranteed by design but not production tested.
Specification subject to change without notice.
t
t
4
3
CLOCK
t
t
2
1
DB1
(CONTROL BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
DATA
DB21 (MSB)
DB20
DB2
t
6
LE
LE
t
5
Figure 1. Timing Diagram
Lead Temperature, Soldering
ABSOLUTE MAXIMUM RATINGS1, 2
(TA = 25°C unless otherwise noted)
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C
VDD1 to GND3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
DD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VP1, VP2 to VDD . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V
Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V
REFIN, RFINA, RFINB,
IFINA, IFINB to GND . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C
TSSOP θJA Thermal Impedance . . . . . . . . . . . . . 150.4°C/W
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
V
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2This device is a high-performance RF integrated circuit with an ESD rating of
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling
and assembly.
1
3GND = AGND = DGND = 0 V.
TRANSISTOR COUNT
11749 (CMOS) and 522 (Bipolar).
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option*
ADF4216BRU
ADF4217BRU
ADF4218BRU
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
Thin Shrink Small Outline Package (TSSOP)
RU-20
RU-20
RU-20
*Contact the factory for chip availability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
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